Photopolymer materials and processes for advanced technologies
JV Crivello, E Reichmanis - Chemistry of Materials, 2014 - ACS Publications
Photopolymers broadly comprise monomers, oligomers, polymers, or mixtures of the
aforementioned materials that upon exposure to light undergo photochemical reactions that …
aforementioned materials that upon exposure to light undergo photochemical reactions that …
Overview of materials and processes for lithography
RA Lawson, APG Robinson - Frontiers of nanoscience, 2016 - Elsevier
Computers and other electronic devices are an integral and ubiquitous part of the modern
world. One of the key drivers for the development, power, cost, and availability of these …
world. One of the key drivers for the development, power, cost, and availability of these …
Pattern collapse mitigation strategies for EUV lithography
DL Goldfarb, RL Bruce, JJ Bucchignano… - … EUV) Lithography III, 2012 - spiedigitallibrary.org
In this study, a comprehensive approach towards assessing pattern collapse challenges and
solutions for Extreme Ultraviolet Lithography (EUV) resists beyond the 14nm node is …
solutions for Extreme Ultraviolet Lithography (EUV) resists beyond the 14nm node is …
Negative-tone organic molecular resists
RA Lawson, A Frommhold, D Yang… - Frontiers of …, 2016 - Elsevier
Negative-tone molecular resists are organic small molecule resists that can be
lithographically patterned in the negative tone. This chapter examines a wide variety of …
lithographically patterned in the negative tone. This chapter examines a wide variety of …
Postiive tone resists based on network deploymerization of molecular resists
RA Lawson, J Cheng, A Cheshmehkani… - Advances in Resist …, 2013 - spiedigitallibrary.org
Conventional chemically amplified resists have several issues that can potentially limit their
capability for sub-40 nm imaging. One of the major issues at this size scale is that the …
capability for sub-40 nm imaging. One of the major issues at this size scale is that the …
A comprehensive model and method for model parameterization for predicting pattern collapse behavior in photoresist nanostructures
WM Yeh, RA Lawson… - Advances in Resist …, 2011 - spiedigitallibrary.org
Pattern collapse has become an issue of increasing importance in semiconductor
lithography as the size of critical features continues to shrink. Although models have been …
lithography as the size of critical features continues to shrink. Although models have been …
Investigating SEM metrology effects using a detailed SEM simulation and stochastic resist model
RA Lawson, CL Henderson - Metrology, Inspection, and …, 2015 - spiedigitallibrary.org
A Monte Carlo electron scattering simulation tool that can create SEM images of 3D features
with arbitrary geometry has been developed. This is combined with both a stochastic resist …
with arbitrary geometry has been developed. This is combined with both a stochastic resist …
Application of aziridine reactive rinses in a post-development process to reduce photoresist pattern collapse
WM Yeh, RA Lawson, LM Tolbert… - Advances in Resist …, 2012 - spiedigitallibrary.org
One of the problems for lithographic processes at very small feature scales is pattern
collapse caused by unbalanced capillary forces experienced by the photoresist patterns …
collapse caused by unbalanced capillary forces experienced by the photoresist patterns …