It is well known that multilevel converters can offer significant benefits in terms of harmonic
performance and reduced switching losses compared to their two-level counterparts …

Many research works have been conducted on increasing the efficiency of interleaved boost
converters (IBCs) applied for power factor correction (PFC) by using high-performance …

Power electronics switching devices involving Wide Band Gap (WBG) materials such as,
silicon carbide (SiC) and gallium nitride (GaN) provide substantial switching level …

Silicon carbide (SiC) device has become the primary choice for high‐efficiency power
electronic equipment due to its excellent performance. However, its higher switching …

摘要碳化硅(SiC) 半导体器件由于其宽禁带材料的优良特性受到了广泛关注. SiC
半导体器件作为一种新型器件, 对其与Si 半导体器件的特性对比及评估越来越有必要 …

Power semiconductor devices made with wide-bandgap (WBG) materials such as Silicon
Carbide (SiC) are improving the energy conversion efficiency, power density, and switching …

Silicon carbide (SiC) semiconductor devices have received extensive attention with the
better performance of the wide band gap material. It is necessary to compare with their …

An LLCL-filter is becoming more attractive than an LCL-filter as the interface between the
grid-tied inverter and the grid due to possibility of reducing the copper and the magnetic …

Decades of research have seen single-phase boost-type pulse-width modulation converters
be employed as front-end power factor correction (PFC) rectifiers in commercial power …

SiC Schottky Barrier diodes (SiC SBD) are known to oscillate/ring in the output terminal
when used as free-wheeling diodes in voltage-source converters. This ringing is due to RLC …