Engineering half-Heusler thermoelectric materials using Zintl chemistry

WG Zeier, J Schmitt, G Hautier, U Aydemir… - Nature Reviews …, 2016 - nature.com
Half-Heusler compounds based on XNiSn and XCoSb (X= Ti, Zr or Hf) have rapidly become
important thermoelectric materials for converting waste heat into electricity. In this Review …

Electronic transport properties of electron- and hole-doped semiconducting Heusler compounds:

S Ouardi, GH Fecher, B Balke, X Kozina… - Physical Review B …, 2010 - APS
The substitutional series of Heusler compounds NiTi 1− x M x Sn (where M= Sc, V and 0<
x≤ 0.2) were synthesized and investigated with respect to their electronic structure and …

Sc solubility in p-type half-Heusler (Ti1-cScc) NiSn thermoelectric alloys

M Kaller, D Fuks, Y Gelbstein - Journal of Alloys and Compounds, 2017 - Elsevier
Global climate changes, due to rise of combustion of fossil fuels and greenhouse gas
emissions, are becoming a major environmental concern, which can be approached by …

Power factor enhancement in a composite based on the half-Heusler antimonide TmNiSb

K Synoradzki, K Ciesielski, L Kępiński… - Journal of Applied …, 2018 - pubs.aip.org
Electrical transport studies of half-Heusler (HH)-based composites (TmNiSb) 1− x (TmNiSn)
x were carried out in a wide temperature range aimed at searching for possible …

Tuning conduction properties and clarifying thermoelectric performance of P-type half-heusler alloys TiNi1− xCoxSn (0≤ x≤ 0.15)

K Yamazaki, S Sam, Y Okamoto, H Nakatsugawa - Solid State Sciences, 2024 - Elsevier
TiNiSn is an N-type thermoelectric material with a high-power factor composed of low toxicity
and abundant elements. TiNiSn also shows P-type electrical conduction by hole doping. In …

Reduced lattice thermal conductivity of Ti-site substituted transition metals Ti1-XTMXNiSn: A quasi-harmonic Debye model study

M Rittiruam, A Yangthaisong, T Seetawan - Chinese Journal of Physics, 2019 - Elsevier
TiNiSn thermoelectric (TE) material has a high power factor, but it also has high thermal
conductivity, which is a problem for low performance. In this work, we propose to reduce the …

Electronic structure and physical properties of Heusler compounds for thermoelectric and spintronic applications

S Ouardi - 2012 - osti.gov
This thesis focuses on synthesis as well as investigations of the electronic structure and
properties of Heusler compounds for spintronic and thermoelectric applications. The first part …

Resistivity and thermopower calculations in half-Heusler Ti1− xScxNiSn alloys from the KKR-CPA method

T Stopa, J Tobola, S Kaprzyk, EK Hlil… - Journal of Physics …, 2006 - iopscience.iop.org
Abstract The Korringa–Kohn–Rostoker method with the coherent potential approximation
(KKR-CPA) was applied to calculate electronic structure and transport coefficients in …

Peculiarity of metal–insulator transition due to composition change in the semiconducting TiCo1− xNixSb solid solution: I. Electronic structure calculations

LP Romaka, MG Shelyapina, YV Stadnyk… - Journal of alloys and …, 2006 - Elsevier
The Korringa–Kohn–Rostoker Green's function method within the coherent-potential
approximation was applied to calculate the electronic properties of recently synthesised …

Conductivity mechanisms in heavy-doped n-ZrNiSn intermetallic semiconductors

D Fruchart, VA Romaka, YV Stadnyk… - Journal of alloys and …, 2007 - Elsevier
A high concentration of the acceptor impurities (NA about of 1020cm− 3) influence on the
electronic structure, the Fermi level location, electro-conductivity, Seebeck coefficient, and …