X-ray diffraction imaging of deformations in thin films and nano-objects
O Thomas, S Labat, T Cornelius, MI Richard - Nanomaterials, 2022 - mdpi.com
The quantification and localization of elastic strains and defects in crystals are necessary to
control and predict the functioning of materials. The X-ray imaging of strains has made very …
control and predict the functioning of materials. The X-ray imaging of strains has made very …
[HTML][HTML] Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro-and photoluminescence
The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree
depends on uniformity of hole distribution between the QWs. Typically, transport between …
depends on uniformity of hole distribution between the QWs. Typically, transport between …
[HTML][HTML] Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells
Time-and spectrally-resolved scanning near-field optical microscopy was applied to study
spatial variations of photoluminescence (PL) spectra and carrier dynamics in polar …
spatial variations of photoluminescence (PL) spectra and carrier dynamics in polar …
Nanoscale Mapping of the Full Strain Tensor, Rotation, and Composition in Partially Relaxed Layers by Scanning X-ray Diffraction Microscopy
C Richter, VM Kaganer, A Even, A Dussaigne… - Physical Review …, 2022 - APS
Strain and composition play a fundamental role in semiconductor physics, since they are
means to tune the electronic and optical properties of a material and hence develop …
means to tune the electronic and optical properties of a material and hence develop …
Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits
The effect of varying threading dislocation densities on the internal quantum efficiencies
(IQEs) of InGaN quantum wells (QWs), with and without intentionally created “V-pits,” is …
(IQEs) of InGaN quantum wells (QWs), with and without intentionally created “V-pits,” is …
Correlation between growth interruption and indium segregation in InGaN MQWs
M Dmukauskas, J Mickevičius, D Dobrovolskas… - Journal of …, 2020 - Elsevier
InGaN/GaN multiple quantum wells (MQWs) with the same indium content and QW widths
were grown by metalorganic chemical vapor deposition using metal precursor flow …
were grown by metalorganic chemical vapor deposition using metal precursor flow …
Thermal effect induced dynamically lasing mode tuning in GaN whispering gallery microcavities
Thermal modulated real-time wavelength tuning of semiconductors has shown great
potential for GaN-based sensors or photo-electricity modulators. Herein, we study the …
potential for GaN-based sensors or photo-electricity modulators. Herein, we study the …
Localized-state ensemble model analysis of InGaN/GaN quantum well structures with different dislocation densities
DS Arteev, AV Sakharov, EE Zavarin… - Semiconductor …, 2021 - iopscience.iop.org
The influence of dislocations on luminescence of InGaN/GaN multiple quantum wells was
investigated by temperature-dependent and time-resolved room-temperature …
investigated by temperature-dependent and time-resolved room-temperature …
[HTML][HTML] Macrodefects investigation in a-GaN films
A Savchuk, O Rabinovich, V Mezhenny, A Chelny… - AIP Advances, 2022 - pubs.aip.org
Investigation of the effect of crystal defects on nonpolar a-GaN films grown by metalorganic
chemical vapor deposition on r-sapphire substrates is presented. Samples were grown at …
chemical vapor deposition on r-sapphire substrates is presented. Samples were grown at …
Volumetric carrier injection in InGaN quantum well light emitting diodes
InGaN/GaN quantum well (QW) light emitting diodes (LEDs) are essential components of
solid-state lighting and displays. However, the efficiency of long wavelength (green to red) …
solid-state lighting and displays. However, the efficiency of long wavelength (green to red) …