Complementary probes for the electrochemical interface

E Pastor, Z Lian, L Xia, D Ecija… - Nature Reviews …, 2024 - nature.com
The functions of electrochemical energy conversion and storage devices rely on the
dynamic junction between a solid and a fluid: the electrochemical interface (EI). Many …

Scanning tunneling microscopy of semiconductor surfaces

JA Kubby, JJ Boland - Surface science reports, 1996 - Elsevier
This review describes advances in understanding the structural, electronic, and chemical
properties of clean low-index semiconductor surfaces during the first decade following the …

Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

MM Ugeda, AJ Bradley, SF Shi, FH Da Jornada… - Nature materials, 2014 - nature.com
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as a
new platform for exploring 2D semiconductor physics,,,,,,,,. Reduced screening in two …

TiO2 Anatase with a Bandgap in the Visible Region

C Dette, MA Pérez-Osorio, CS Kley, P Punke… - Nano …, 2014 - ACS Publications
TiO2 anatase plays a central role in energy and environmental research. A major bottleneck
toward developing artificial photosynthesis with TiO2 is that it only absorbs ultraviolet light …

Direct Imaging of Band Profile in Single Layer MoS2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending

C Zhang, A Johnson, CL Hsu, LJ Li, CK Shih - Nano letters, 2014 - ACS Publications
Using scanning tunneling microscopy and spectroscopy, we probe the electronic structures
of single layer MoS2 on graphite. The apparent quasiparticle energy gap of single layer …

Ultrafast terahertz control of extreme tunnel currents through single atoms on a silicon surface

V Jelic, K Iwaszczuk, PH Nguyen, C Rathje, GJ Hornig… - Nature Physics, 2017 - nature.com
Ultrafast control of current on the atomic scale is essential for future innovations in
nanoelectronics. Extremely localized transient electric fields on the nanoscale can be …

Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors

RM Feenstra - Physical Review B, 1994 - APS
Results of tunneling spectroscopy measurements of the (110) cleaved surface of GaAs, InP,
GaSb, InAs, and InSb are presented. These materials form the family of direct-gap III-V …

Gate-controlled ionization and screening of cobalt adatoms on a graphene surface

VW Brar, R Decker, HM Solowan, Y Wang, L Maserati… - Nature Physics, 2011 - nature.com
Graphene impurities provide both a source of mobility-limiting disorder and a means to
desirably alter graphene electronic structure. Adsorbates on graphene can, for example …

Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures

Z Ben Aziza, D Pierucci, H Henck, MG Silly, C David… - Physical Review B, 2017 - APS
Two-dimensional (2D) materials have recently been the focus of extensive research. By
following a similar trend as graphene, other 2D materials, including transition metal …

2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film

M Timpel, G Ligorio, A Ghiami, L Gavioli… - npj 2D Materials and …, 2021 - nature.com
The ongoing miniaturization of electronic devices has boosted the development of new post-
silicon two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, one …