Complementary probes for the electrochemical interface
The functions of electrochemical energy conversion and storage devices rely on the
dynamic junction between a solid and a fluid: the electrochemical interface (EI). Many …
dynamic junction between a solid and a fluid: the electrochemical interface (EI). Many …
Scanning tunneling microscopy of semiconductor surfaces
JA Kubby, JJ Boland - Surface science reports, 1996 - Elsevier
This review describes advances in understanding the structural, electronic, and chemical
properties of clean low-index semiconductor surfaces during the first decade following the …
properties of clean low-index semiconductor surfaces during the first decade following the …
Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as a
new platform for exploring 2D semiconductor physics,,,,,,,,. Reduced screening in two …
new platform for exploring 2D semiconductor physics,,,,,,,,. Reduced screening in two …
TiO2 Anatase with a Bandgap in the Visible Region
TiO2 anatase plays a central role in energy and environmental research. A major bottleneck
toward developing artificial photosynthesis with TiO2 is that it only absorbs ultraviolet light …
toward developing artificial photosynthesis with TiO2 is that it only absorbs ultraviolet light …
Direct Imaging of Band Profile in Single Layer MoS2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending
Using scanning tunneling microscopy and spectroscopy, we probe the electronic structures
of single layer MoS2 on graphite. The apparent quasiparticle energy gap of single layer …
of single layer MoS2 on graphite. The apparent quasiparticle energy gap of single layer …
Ultrafast terahertz control of extreme tunnel currents through single atoms on a silicon surface
Ultrafast control of current on the atomic scale is essential for future innovations in
nanoelectronics. Extremely localized transient electric fields on the nanoscale can be …
nanoelectronics. Extremely localized transient electric fields on the nanoscale can be …
Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors
RM Feenstra - Physical Review B, 1994 - APS
Results of tunneling spectroscopy measurements of the (110) cleaved surface of GaAs, InP,
GaSb, InAs, and InSb are presented. These materials form the family of direct-gap III-V …
GaSb, InAs, and InSb are presented. These materials form the family of direct-gap III-V …
Gate-controlled ionization and screening of cobalt adatoms on a graphene surface
Graphene impurities provide both a source of mobility-limiting disorder and a means to
desirably alter graphene electronic structure. Adsorbates on graphene can, for example …
desirably alter graphene electronic structure. Adsorbates on graphene can, for example …
Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures
Z Ben Aziza, D Pierucci, H Henck, MG Silly, C David… - Physical Review B, 2017 - APS
Two-dimensional (2D) materials have recently been the focus of extensive research. By
following a similar trend as graphene, other 2D materials, including transition metal …
following a similar trend as graphene, other 2D materials, including transition metal …
2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film
The ongoing miniaturization of electronic devices has boosted the development of new post-
silicon two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, one …
silicon two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, one …