A review of low‐temperature solution‐processed metal oxide thin‐film transistors for flexible electronics

JW Park, BH Kang, HJ Kim - Advanced Functional Materials, 2020 - Wiley Online Library
Solution processing, including printing technology, is a promising technique for oxide thin‐
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …

A review of phototransistors using metal oxide semiconductors: Research progress and future directions

H Yoo, IS Lee, S Jung, SM Rho, BH Kang… - Advanced …, 2021 - Wiley Online Library
Metal oxide thin‐film transistors have been continuously researched and mass‐produced in
the display industry. However, their phototransistors are still in their infancy. In particular …

Neuromorphic active pixel image sensor array for visual memory

S Hong, H Cho, BH Kang, K Park, D Akinwande… - ACS …, 2021 - ACS Publications
Neuromorphic engineering, a methodology for emulating synaptic functions or neural
systems, has attracted tremendous attention for achieving next-generation artificial …

Amorphous InGaZnO (a-IGZO) synaptic transistor for neuromorphic computing

Y Jang, J Park, J Kang, SY Lee - ACS Applied Electronic Materials, 2022 - ACS Publications
Brain-inspired neuromorphic computing emulates the biological functions of the human
brain to achieve highly intensive data processing with low power consumption. In particular …

Recent progress in optoelectronic memristors for neuromorphic and in-memory computation

ME Pereira, R Martins, E Fortunato… - Neuromorphic …, 2023 - iopscience.iop.org
Neuromorphic computing has been gaining momentum for the past decades and has been
appointed as the replacer of the outworn technology in conventional computing systems …

Optoelectronic In‐Ga‐Zn‐O memtransistors for artificial vision system

W Qiu, Y Huang, LA Kong, Y Chen… - Advanced Functional …, 2020 - Wiley Online Library
An artificial vision system that can simulate the visual functions of human eyes is required for
biological robots. Here, In‐Ga‐Zn‐O memtransistors using a naturally oxidized Al2O3 and …

Probing the efficacy of large-scale nonporous IGZO for visible-to-NIR detection capability: an approach toward high-performance image sensor circuitry

A Sen, H Park, P Pujar, A Bala, H Cho, N Liu… - ACS …, 2022 - ACS Publications
The technological ability to detect a wide spectrum range of illuminated visible-to-NIR is
substantially improved for an amorphous metal oxide semiconductor, indium gallium zinc …

Unlocking neuromorphic vision: Advancements in IGZO-based optoelectronic memristors with visible range sensitivity

ME Pereira, J Deuermeier, R Martins… - ACS Applied …, 2024 - ACS Publications
Optoelectronic memristors based on amorphous oxide semiconductors (AOSs) are
promising devices for the development of spiking neural network (SNN) hardware in …

New approach to low-power-consumption, high-performance photodetectors enabled by nanowire source-gated transistors

M Wang, X Zhuang, F Liu, Y Chen, Z Sa, Y Yin, Z Lv… - Nano Letters, 2022 - ACS Publications
Power consumption makes next-generation large-scale photodetection challenging. In this
work, the source-gated transistor (SGT) is adopted first as a photodetector, demonstrating …

High photosensitive indium–gallium–zinc oxide thin-film phototransistor with a selenium capping layer for visible-light detection

H Yoo, WG Kim, BH Kang, HT Kim… - … applied materials & …, 2020 - ACS Publications
Visible light can be detected using an indium–gallium–zinc oxide (IGZO)-based
phototransistor, with a selenium capping layer (SCL) that functions as a visible light …