Gallium nitride (GaN) power devices enable power electronic systems with enhanced power
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …

This paper provides an overview of the developments in microwave diamond field‐effect
transistor (D‐FET) technologies. Due to the ultrawide‐bandgap and high carrier velocity and …

We demonstrate the electrical performances of AlGaN/GaN metal-insulator-semiconductor-
high electron mobility transistors (MIS-HEMTs) with high quality Al 2 O 3 gate dielectric …

This article proposed a hard switching high-temperature reverse bias (HS-HTRB) stress test
method with a high measurement delay tolerance to study the impacts and mechanisms of …

This paper investigates a method for quantifying the additional losses in high-voltage GaN
enhancement mode HEMTs (eHEMT) employed in converter applications. The additional …

A normally-off p-GaN/AlGaN/GaN high-electron-mobility transistor (p-GaN HEMTs) with a
semitransparent gate electrode was investigated. Under forward gate bias …

A novel lateral heterojunction diode with a low turn-on voltage is proposed in this paper.
Verified by theoretical analysis and simulations, it is partially relaxed InGaN channel that …

On-resistance (R_DSon) is a critical parameter in the performance and reliability of Gallium
Nitride (GaN) devices. This paper introduces a novel on-wafer test system designed to …

In this work, we performed an investigation on the electrical characteristics of the interfaces
of SiON/AlGaN and SiON/GaN by fabricating a partially gate-recessed metal-insulator …

The threshold voltage instability in AlGaN/GaN MIS-HEMTs is due to dielectric induced
traps. In this paper, DC IV and fast transient IV measurements were used to characterize the …