The GaN HEMT is a potential candidate for RF applications due to the high frequency and
large power handling capability. To ensure the quality of the communication signal, linearity …

This paper investigates AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated on
epistructures with carbon (C)-doped buffers. Metalorganic chemical vapor deposition is used …

Low damage atomic layer etching (ALE) gate recess is developed for fabrication of
millimeter-wave AlGaN/GaN high-electron-mobility transistors (HEMTs). Plasma ion induced …

We propose two kinds of stacked materials that effectively yield low drain off-state leakage
current, high off-state breakdown voltage and low current collapse simultaneously in …

The DC and RF capability of GaN high electron mobility transistor (HEMT) was enhanced by
incoorporating BGaN back barrier (BB). Different types of back barriers like AlGaN, BGaN …

Abstract The performance of AlGaN/GaN HEMT is enhanced by using discrete field plate
(DFP) and AlGaN blocking layer. The AlGaN blocking layer provides an excellent …

Recess gate AlGaN/GaN millimeter-wave power high-electron-mobility transistors (HEMTs)
with N 2 O plasma treatment on access region have been fabricated. A thin oxide layer …

Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a
Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. With …

Background: The upsurge in the field of radio frequency power electronics has led to the
involvement of wide bandgap semiconductor materials because of their potential …

In this letter, AlGaN/GaN HEMTs with tall-gate-stem structures were realized to improve the
power performance of Ka-band devices, and a film thinning process is adopted in the …