A near-infrared fluorescence enhancement strategy of amorphous silicon nanoparticles for night vision imaging and visualizing latent fingerprints
Q Zhang, W Ge, Y Wang, D Han, M Yang… - Journal of Materials …, 2024 - pubs.rsc.org
In recent years, broadband near-infrared (NIR) spectroscopy has attracted widespread
research attention. However, the development of broadband NIR-emitting phosphors with …
research attention. However, the development of broadband NIR-emitting phosphors with …
Enhancing light emission of Si nanocrystals by means of high-pressure hydrogenation
Y Zhang, C Zhang, S Li, X Dai, X Ma, R Gao, W Zhou… - Optics …, 2020 - opg.optica.org
High-density Si nanocrystal thin film composed of Si nanocrystals and SiO_2, or Si-NCs:
SiO_2, was prepared by annealing hydrogen silsesquioxane (HSQ) in a hydrogen and …
SiO_2, was prepared by annealing hydrogen silsesquioxane (HSQ) in a hydrogen and …
Emission characteristics of all-silicon distributed feedback lasers with a wide gain range
C Zhang, P Zeng, WJ Zhou, YC Zhang… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
With the development of nanomanufacturing methods, the manipulation of photons down to
the nanoscale in silicon integrated optical chips has become a feasible and promising …
the nanoscale in silicon integrated optical chips has become a feasible and promising …
Enhancement of light emission of a low-resistivity silicon nanocrystal thin film: A simulational and experimental study
F Ma, J Zhou, K Liu, Z Yan, X Dai, L Wu, L Yu… - Applied Physics …, 2024 - pubs.aip.org
A silicon nanocrystal (Si NC) white light-emitting (λ=∼ 400–900 nm) thin film with a relatively
low resistivity of 1.6× 10 4 Ω m has been prepared as an active medium for electrically …
low resistivity of 1.6× 10 4 Ω m has been prepared as an active medium for electrically …
Enhancing optical gains in Si nanocrystals via hydrogenation and cerium ion doping
DC Wang, JR Chen, YL Li, SC Song… - Journal of Applied …, 2014 - pubs.aip.org
We report optical gain enhancements in Si nanocrystals (Si-NCs) via hydrogenation and Ce
3+ ion doping. Variable stripe length technique was used to obtain gains. At 0.3 W/cm 2 …
3+ ion doping. Variable stripe length technique was used to obtain gains. At 0.3 W/cm 2 …
High-pressure Ar passivation to enhance the photoluminescence of Si nanocrystals
S Li, YC Zhang, C Zhang, XY Dai, ZY Yu, F Hu… - Physica E: Low …, 2021 - Elsevier
Photoluminescence (PL) enhancement of Si nanocrystals (Si–NCs) embedded in SiO 2
matrix by high-pressure (30 bar) Ar passivation at moderately high temperatures has been …
matrix by high-pressure (30 bar) Ar passivation at moderately high temperatures has been …
Photoluminescence responses of Si nanocrystal to differing pumping conditions
Under a CW Ar+ laser beam excitation with wavelength of 496 nm, the relationship of
photoluminescence (PL) intensity versus pumping power density was investigated for both …
photoluminescence (PL) intensity versus pumping power density was investigated for both …
Solar cell performance improvement via photoluminescence conversion of Si nanoparticles
M Zhang, Y Ren, D Cheng, M Lu - Chinese Optics Letters, 2012 - opg.optica.org
Photoluminescence (PL) conversion of Si nanoparticles by absorbing ultraviolet (UV) lights
and emitting visible ones has been used to improve the efficiency of crystalline Si solar cells …
and emitting visible ones has been used to improve the efficiency of crystalline Si solar cells …
Matrix effect on the photoluminescence of Si nanocrystal
J Zhu, HC Hao, D Li, M Lu - Journal of nanoparticle research, 2012 - Springer
To examine the matrix effect on the light emission of Si nanocrystal (Si-NC), we investigated
the photoluminescence (PL) of Si-NC from multilayered samples of Si/SiO 2 and SiO/SiO 2 …
the photoluminescence (PL) of Si-NC from multilayered samples of Si/SiO 2 and SiO/SiO 2 …
Photoluminescence of Si from Si nanocrystal-doped SiO2/Si multilayered sample
Y Ren, YB Chen, M Zhang, J Zhu, XW Zhang… - Applied surface …, 2011 - Elsevier
A multilayered Si nanocrystal-doped SiO2/Si (or Si-nc: SiO2/Si) sample structure is studied
to acquire strong photoluminescence (PL) emission of Si via modulating excess Si …
to acquire strong photoluminescence (PL) emission of Si via modulating excess Si …