Oxides have become a key ingredient for new concepts of electronic devices. To a large
extent, this is due to the profusion of new physics and novel functionalities arising from …

Two-dimensional electron gases (2DEGs) based on conventional semiconductors such as
Si or GaAs have played a pivotal role in fundamental science and technology. The high …

The discovery of a two-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 interface has
resulted in the observation of many properties,,–not present in conventional semiconductor …

Whenever a compound crystal is cut normal to a randomly chosen direction, there is an
overwhelming probability that the resulting surface corresponds to a polar termination and is …

The complete atomic structure of a five-monolayer film of LaAlO 3 on SrTiO 3 has been
determined for the first time by surface x-ray diffraction in conjunction with the coherent …

Transport measurements of the two-dimensional electron gas at the LaAlO 3-SrTiO 3
interface have found a density of carriers much lower than expected from the “polar …

At the interface between complex insulating oxides, novel phases with interesting properties
may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. Although this …

A pronounced uniform polar distortion extending over several unit cells enables thin LaAlO 3
overlayers on SrTiO 3 (001) to counteract the charge dipole and thereby neutralize the …

A large variety of transport properties have been observed at the interface between the
insulating oxides SrTiO3 and LaAlO3 such as insulation, 2D interface metallicity, 3D bulk …

Multilayer VO 2/TiO 2 nanostructures (d 1-d 0 interfaces with no polar discontinuity) are
studied with first-principles density functional methods including structural relaxation …