Raman microscopy and infrared optical properties of SiGe Mie resonators formed on SiO2 via Ge condensation and solid state dewetting

V Poborchii, M Bouabdellaoui, N Uchida… - …, 2020 - iopscience.iop.org
All-dielectric photonics is a rapidly developing field of optics and material science. The main
interest at visible and near-infrared frequencies is light management using high-refractive …

Tailoring strain and morphology of core–shell SiGe nanowires by low-temperature ge condensation

T David, K Liu, A Ronda, L Favre, M Abbarchi… - Nano …, 2017 - ACS Publications
Selective oxidation of the silicon element of silicon germanium (SiGe) alloys during thermal
oxidation is a very important and technologically relevant mechanism used to fabricate a …

Local defect-free elastic strain relaxation of Si1-xGex embedded into SiO2

E Assaf, I Berbezier, M Bouabdellaoui, M Abbarchi… - Applied Surface …, 2022 - Elsevier
We show that a newly developed high temperature, ultra-low rate oxidation process can
produce homogeneous, fully strained, defect-free and perfectly flat Silicon Germanium (Si 1 …

New strategies for engineering tensile strained Si layers for novel N-type MOSFET

T David, I Berbezier, JN Aqua, M Abbarchi… - … applied materials & …, 2020 - ACS Publications
We report a novel approach for engineering tensely strained Si layers on a relaxed silicon
germanium on insulator (SGOI) film using a combination of condensation, annealing, and …

Engineering epitaxy and condensation: Fabrication of Ge nanolayers, mechanism and applications

M Bouabdellaoui, M Bollani, M Salvalaglio… - Applied Surface …, 2023 - Elsevier
Superior properties for complex photonic integrated circuits can be obtained by materials
other than silicon but compatible with established silicon electronics, eg, germanium. In this …

Investigating the effect of silicon thickness on ultra-thin silicon on insulator as a compliant substrate for gallium arsenide heteroepitaxial growth

S Noh, X Hao, Z Liu, MA Green, S Lee, A Ho-Baillie - Thin Solid Films, 2018 - Elsevier
Compliant substrates are one of the many promising lattice engineering approaches for
hetero-epitaxy. There are many approaches to realize such compliant substrates. Silicon-on …

Engineering Epitaxy and Condensation: Fabrication of Ge Nanolayers, Mechanism and Applications

I Berbezier - papers.ssrn.com
High-speed photodetectors with improved external quantum efficiency are the subject of
intense research, particularly for cutting-edge applications such as facial recognition and …

[PDF][PDF] Etude de l'oxydation thermique d es couches S i 1 x G ex sur SOI

I GUELLIL - 2018 - ensmm.memoires.ensti-annaba.dz
Le stage consiste en un développement d'un procédé combinant épitaxies Si et Ge,
oxydations et recuits pour obtenir du SiGe sur oxyde (SGOI) puis pouvoir réaliser cette …

Ultrathin Silicon-an-Insulator (SOI) Wafer for Compliant Substrate

S Noh, A Ho-Baillie, S Bremner… - 2017 IEEE 44th …, 2017 - ieeexplore.ieee.org
Compliant substrate is one of the most promising approaches for heteroepitaxy of the
semiconductor devices. SO! wafer is the only commercial structure used for the compliant …

[引用][C] Réalisation de couches Si contraintes en tension sur des structures SGOI

I GUELLIL - 2018 - … Supérieure des Mines et de la …