Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes
Abstract Metal–insulator–semiconductor (MIS) structure of Cu/Zr–WO x/p-Si Schottky diodes
with different concentrations (0, 4 and 8 wt%) of Zr content were fabricated. The interfacial …
with different concentrations (0, 4 and 8 wt%) of Zr content were fabricated. The interfacial …
Temperature dependent I–V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung's model
The current–voltage (I–V) characteristics of Au/n-GaAs contacts prepared with
photolithography technique have been measured in the temperature range of 80–320K. The …
photolithography technique have been measured in the temperature range of 80–320K. The …
Improved electrochemical hydrogen peroxide detection using a nickel (II) phthalimide-substituted porphyrazine combined with various carbon nanomaterials
A Leda, M Hassani, T Rebis, M Falkowski, J Piskorz… - Nanomaterials, 2023 - mdpi.com
A metal-free porphyrazine derivative with peripheral phthalimide substituents was
metallated with a nickel (II) ion. The purity of the nickel macrocycle was confirmed using …
metallated with a nickel (II) ion. The purity of the nickel macrocycle was confirmed using …
Comparative study of I–V methods to extract Au/FePc/p-Si Schottky barrier diode parameters
Ç Oruç, A Altındal - Applied Physics A, 2018 - Springer
So far, various methods have been proposed to extract the Schottky diode parameters from
measured current–voltage characteristics. In this work, Schottky barrier diode with structure …
measured current–voltage characteristics. In this work, Schottky barrier diode with structure …
Fabrication of NiS decorated hollow SnS nano-belts based photodiode for enhanced optoelectronic applications
The physical, chemical, and electrical properties of materials are influenced by the shape,
size, and surface morphology such as rod, core-shell, network, and flowers. Herein, hollow …
size, and surface morphology such as rod, core-shell, network, and flowers. Herein, hollow …
Electrical and photoelectrical characterization of a TTF/p-InP organic–inorganic heterojunction
Abstract Tetrathiafulvalene (TTF) with C 6 H 4 S 4 molecular formula was used in the
fabrication of organic–inorganic (OI) heterojunction. The Al/TTF/p-InP/Au–Zn structure was …
fabrication of organic–inorganic (OI) heterojunction. The Al/TTF/p-InP/Au–Zn structure was …
LambertW Function to Extract Physical Parameters of a Schottky Barrier Diode from Its I–V Characteristics
In the current work, the exact analytical expression of the current–voltage characteristics,
which are given in terms of the L ambert W function, is used to extract the physical …
which are given in terms of the L ambert W function, is used to extract the physical …
Correlations for coumarin additive on the electrical and photocatalytic activity of TiO2 modified by thiourea
Doping of TiO 2 was made with thiourea to introduce the C, N and S into the TiO 2. In order
to investigate the effect of coumarin additions, coumarin-doped TiO 2 samples modified by …
to investigate the effect of coumarin additions, coumarin-doped TiO 2 samples modified by …
Fabrication and characterization of illumination-dependent Cu/p-Si Schottky barrier diodes with P (VDF-TrFE)-Ho2O3 nano composite as interfacial insulating layer
KJ Arun, MD Aggarwal - Emergent Materials, 2024 - Springer
Metal insulator semiconductor (MIS) structured Schottky Barrier diodes (SBD) are inevitable
for a wide range of opto electronic devices and applications. Holmium oxide embedded …
for a wide range of opto electronic devices and applications. Holmium oxide embedded …
Characterization of WMoO3 Thin Films and its n-WMoO3/p-Si Junction Diodes Via JNS Pyrolysis Technique
M Balaji, J Chandrasekaran, M Raja - Zeitschrift für Physikalische …, 2017 - degruyter.com
The jet nebulizer sprayed tungsten doped molybdenum trioxide (WMoO3) thin films and its
PN junction diode parameters have been studied for different doping concentrations (0, 3, 6 …
PN junction diode parameters have been studied for different doping concentrations (0, 3, 6 …