Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling
In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the
spin drift–diffusion model to address the back-hopping effect. This issue manifests as …
spin drift–diffusion model to address the back-hopping effect. This issue manifests as …
HOPE: Holistic STT-RAM Architecture Exploration Framework for Future Cross-Platform Analysis
S Seyedfaraji, M Bichl, A Aftab, S Rehman - IEEE Access, 2024 - ieeexplore.ieee.org
Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile
Memory (NVM) technology that has garnered attention to overcome the drawbacks of …
Memory (NVM) technology that has garnered attention to overcome the drawbacks of …
An Overview of Computation-in-Memory (CIM) Architectures
This chapter presents a comprehensive classification of Computing-In-Memory (CIM)
architectures based on three criteria, namely, computation location, level of parallelism, and …
architectures based on three criteria, namely, computation location, level of parallelism, and …
Interlayer Exchange Coupling for Enhanced Performance in Spin-Transfer Torque Mram Devices
M Bendra, RL de Orio, S Selberherr, W Goes… - Siegfried and Goes … - papers.ssrn.com
This study explores the impact of interface exchange coupling in multilayered spintronic
devices, such as the spin-transfer torquemagnetoresistive random access memory, which is …
devices, such as the spin-transfer torquemagnetoresistive random access memory, which is …