Due to the low power consumption, self-powered ultraviolet (UV) photodetectors (PDs) are
essential for the next-generation optoelectronic applications. In this work, it is pretty novel to …

In this Letter, we perform a comprehensive investigation on the optical characterization of
micro-sized deep-ultraviolet (DUV) LEDs (micro-LEDs) emitting below 280 nm, highlighting …

Abstract Highly ordered Al x Ga 1− x N nanorods with varied aluminum alloy compositions
(0.18≤ x≤ 0.8) are fabricated with nanoimprint lithography and top-down dry etching …

Metal–semiconductor–metal (MSM) configured UV photodiodes (PD's) were designed and
fabricated on an AlGaN/GaN–based substrate for efficient and ultrafast UV detection. The …

Ultraviolet (UV) light-emitting diodes (LEDs), as one of the more promising optoelectronic
devices, are intrinsically limited by poor light extraction efficiencies (LEEs). To unlock the full …

UVC‐LEDs have drawn attention recently because of their benefits to sterilization,
decontamination, etc. Since the internal quantum efficiency and light extraction efficiency …

A formula for the calculation of the refractive index of Al X Ga 1-XN in the infrared region has
previously been proposed. In this paper, the validity of the proposed model is assessed …

Design, Fabrication and Characterization of Efficient and Ultrafast Ultraviolet Photodiodes
Based on Aluminum Gallium Nitride/gallium Nitride Heterostructures Abstract Ultraviolet …

We theoretically demonstrate that Al (Ga) N nanorod arrays (NRAs) exhibit tunable
absorption and achieve selective resonant absorption according to different Al mole factions …

Al x Ga 1− x N epilayers, grown on c-plane oriented sapphire substrates by metal organic
chemical vapour deposition (MOCVD), were evaluated using FTIR infrared reflectance …