US10515981B2 - Multilevel semiconductor device and structure with memory - Google
Patents US10515981B2 - Multilevel semiconductor device and structure with memory …

H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state
components formed in or on a common substrate including semiconductor components …

A device, including: a first structure including first memory cells, the first memory cells
including first transistors; and a second structure including second memory cells, the second …

A method for processing a 3D semiconductor device, the method including: providing a
wafer including a plurality of first dies, the plurality of first dies including a first transistor layer …

Embodiments of 3D memory devices and fabricating meth ods thereof are disclosed. The
device comprises an array device semiconductor structure comprising an array inter connect …

A multilevel semiconductor device including: a first level including a first array of first memory
cells and first control line; a second level including a second array of second memory cells …

Semiconductor chips are provided. A semiconductor chip includes a peripheral circuit region
on a substrate. The semiconductor chip includes a semiconductor layer on the peripheral …

H01L23/522—Arrangements for conducting electric current within the device in operation
from one component to another, ie interconnections, eg wires, lead frames including …

Disclosed is a three-dimensional semiconductor device including a horizontal
semiconductor layer including a plu rality of well regions having a first conductivity and a …

29/66833 (2013. 01); HOIL 29/792 (2013. 01)(57) ABSTRACT The present disclosure
describes methods and structures for three-dimensional memory devices. The methods …