In the history of electronics, solid-state materials replaced the vacuum parts to reduce power
consumption and to obtain better reliability at a reduced cost. The size of solid-state …

Carbon nanotube field‐effect transistor (CNTFET) is a good option to replace silicon for low
power consumption application. Recent research shows that CN‐FET thermal and electrical …

Excellent electrical performance and extreme sensitivity to chemical species in
semiconducting Single-Walled Carbon NanoTubes (s-SWCNTs) motivated the study of …

Increasingly complex demonstrations of integrated circuit elements based on
semiconducting single-walled carbon nanotubes (SWCNTs) mark the maturation of this …

Special radiation-hard and ultralow-power complementary metal–oxide–semiconductor
(CMOS) integrated circuits (ICs) are used in the fields of deep space, nuclear energy, and …

From man-made satellites and interplanetary missions to fusion power plants, electronic
equipment that needs to withstand various forms of irradiation is an essential part of their …

Ionizing radiation poses a significant challenge to the operation and reliability of
conventional silicon-based devices. Here, we report the effects of gamma radiation on …

The electrical breakdown of oxides and oxide/semiconductor interfaces is one of the major
reasons for failure of CMOS ICs, especially when they are exposed to high stress conditions …

We investigate total ionizing dose (TID) effects in graphene field effect transistors comprised
of chemical vapor deposition grown graphene transferred onto trimethylsiloxy (TMS) …

We experimentally investigate the effects of Co-60 irradiation on the electrical properties of
single-walled carbon nanotube and graphene field-effect transistors. We observe significant …