SiC devices exhibit a number of detrimental second order effects which are caused by
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …

This paper reports on the fabrication technology and packaging strategy for 300-V 5-A
silicon carbide Schottky diodes with a wide temperature operation range capability (between …

Abstract Gold-germanium (Au-Ge) joints have been part of the electronics industry since the
birth of the solid state transistor. Today they find their role as a reliable joining technology …

Even though the bypass diodes in the PV module spend most of their time in the reverse
biased condition and often at elevated temperatures, there's no systematic test/methodology …

In this article, we investigate Schottky diodes with pure W and WC alloy metal electrodes.
The electrical characteristics of samples were analyzed by comparing the current density …

In this work, we report the fabrication and characterization of a Schottky diode containing a
metal–semiconductor Schottky junction. The metal–semiconductor Schottky contact was …

Tungsten is a suitable metal contact for high-temperature applications. We fabricated 1.7-kV
and 6-kV 4H-SiC junction barrier Schottky (JBS) diodes with a tungsten Schottky contact with …

ON-state stress induced device degradation of gallium nitride quasivertical Schottky barrier
diode (SBD) with SiO $ _ {\text {2}} $ passivation layer was investigated in this article. The …

The electrical characteristics of W/4H-SiC Schottky contacts formed at different annealing
temperatures have been measured by using current–voltage–temperatures (I–V–T) and …

2 kV–10 A tungsten Schottky diodes (W-SBD) have been aged and tested at limit under
current overload (surge current pulses) to determine their structural weakest spots. All …