Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted
tremendous interest motivated by the extraordinary properties it shows across the fields of …

Abstract Two-dimensional (2D) layered materials are attracting a lot of attention because of
unique physicochemical properties that are intriguing for both fundamental research and …

Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for
fundamental nanoscale science and various technological applications. They are a …

The electrical resistance of interconnect wires increases with decreasing size, causing
signal delay and energy consumption that limits further downscaling of integrated circuits …

As the challenges in continued scaling of the integrated circuit technology escalate every
generation, there is an urgent need to find viable solutions for both the front-end-of-line …

Reliable, controlled doping of 2D transition metal dichalcogenides will enable the realization
of next‐generation electronic, logic‐memory, and magnetic devices based on these …

Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …

This study demonstrates molybdenum disulfide (MoS2) as a superior candidate as a
diffusion barrier and liner. This research explores a newly developed process to show how …

As metallic nanostructures shrink towards the size of the electronic mean free path, thermal
conductivity decreases due to increased electronic scattering rates. Matthiessen's rule is …