Nanocrystals for silicon-based light-emitting and memory devices

SK Ray, S Maikap, W Banerjee… - Journal of Physics D …, 2013 - iopscience.iop.org
Nanocrystals (NCs), representing a zero-dimensional system, are an ideal platform for
exploring quantum phenomena on the nanoscale, and are expected to play a major role in …

A Review on Ge Nanocrystals Embedded in SiO2 and High‐k Dielectrics

D Lehninger, J Beyer, J Heitmann - physica status solidi (a), 2018 - Wiley Online Library
In this article, the work on Ge nanocrystals embedded in dielectric films formed by phase
separation from supersaturated solid solutions is reviewed. Different methods to synthesize …

Formation, dynamics, and characterization of nanostructures by ion beam irradiation

S Dhara - Critical reviews in solid state and materials sciences, 2007 - Taylor & Francis
Ion beam irradiation is a potential tool for phase formation and material modification as a
non-equilibrium technique. Localized rise in temperature and ultra fast (∼ 10− 12 s) …

Qualitative evolution of asymmetric Raman line-shape for nanostructures

R Kumar, G Sahu, SK Saxena, HM Rai, PR Sagdeo - Silicon, 2014 - Springer
A qualitative evolution of an asymmetric Raman line-shape function from a Lorentzian line-
shape is discussed here for application in low dimensional semiconductors. The step-by …

Maskless Micro/Nanopatterning and Bipolar Electrical Rectification of MoS2 Flakes Through Femtosecond Laser Direct Writing

P Zuo, L Jiang, X Li, M Tian, C Xu, Y Yuan… - … applied materials & …, 2019 - ACS Publications
Molybdenum disulfide (MoS2) micro/nanostructures are desirable for tuning electronic
properties, developing required functionality, and improving the existing performance of …

High crystalline hydroxyapatite coating by eclipse type pulsed-laser deposition for low annealing temperature

H Yashiro, M Kakehata - Applied Physics Letters, 2022 - pubs.aip.org
The eclipse type pulsed-laser deposition (PLD) scheme as a droplet-eliminated method with
irradiation on a β-tricalcium phosphate (β-TCP) slab target was employed to achieve high …

Structural and optical properties of porous nanocrystalline Ge

G Kartopu, AV Sapelkin, VA Karavanskii… - Journal of Applied …, 2008 - pubs.aip.org
Nanocrystalline Ge films were prepared by isotropic chemical etching on single-crystalline
Ge substrates with 100 and 111 orientations. The structural and optical properties have …

Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion–crystallization process

AM Lepadatu, T Stoica, I Stavarache… - Journal of nanoparticle …, 2013 - Springer
Abstract Amorphous Ge/SiO 2 multilayer structures deposited by magnetron sputtering have
been annealed at different temperatures between 650 and 800° C for obtaining Ge …

Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2

I Stavarache, AM Lepadatu, T Stoica, ML Ciurea - Applied surface science, 2013 - Elsevier
Ge–SiO 2 films with high Ge/Si atomic ratio of about 1.86 were obtained by co-sputtering of
Ge and SiO 2 targets and subsequently annealed at different temperatures between 600 …

Understanding the fretting wear of Ti3SiC2

D Sarkar, BVM Kumar, B Basu - Journal of the European Ceramic Society, 2006 - Elsevier
The objective of the present research is to understand the tribological properties of Ti3SiC2.
The fretting wear experiments were conducted on hot pressed Ti3SiC2 against bearing steel …