Recent progress on sensitivity analysis of schottky field effect transistor based biosensors
In this review, we explored the modern development of schottky field effect transistor (SK
FET) structures and the improvement of sensitivity of nanowire sensors using dielectric …
FET) structures and the improvement of sensitivity of nanowire sensors using dielectric …
A comparative analysis of cavity positions in charge plasma based tunnel FET for biosensor application
This work reports a comparative analysis of different cavity positions in Charge Plasma-
based Tunnel Field Effect Transistor (CP TFET) for Biosensor Application. In CP TFET, we …
based Tunnel Field Effect Transistor (CP TFET) for Biosensor Application. In CP TFET, we …
Halo-doped hetero dielectric nanowire mosfet scaled to the sub-10 nm node
PK Kumar, B Balaji, KS Rao - Transactions on Electrical and Electronic …, 2023 - Springer
This paper aims to propose a halo-doped hetero dielectric nanowire MOSFET with underlap-
extension and spacer, scaling to the sub-10 nm regime. We demonstrate that halo doping at …
extension and spacer, scaling to the sub-10 nm regime. We demonstrate that halo doping at …
Recent study on Schottky tunnel field effect transistor for biosensing applications
In this review, we discussed highly sensitive biosensor devices which is having a more
attractive, wide scope and development in the sensing field. Biosensor devices can detect …
attractive, wide scope and development in the sensing field. Biosensor devices can detect …
Noise and sensitivity analysis of the dielectric modulated reconfigurable SiNW-SBT for biosensor applications
For the first time, we reported the noise and sensitivity analysis of the Dielectric Modulated
Reconfigurable Silicon Nanowire-based Schottky Barrier Transistor (DMR SiNW-SBT) for …
Reconfigurable Silicon Nanowire-based Schottky Barrier Transistor (DMR SiNW-SBT) for …
Performance analysis of sub 10 nm regime source halo symmetric and asymmetric nanowire MOSFET with underlap engineering
PK Kumar, B Balaji, KS Rao - Silicon, 2022 - Springer
In this paper, we are proposing a gate oxide stack source halo symmetric and asymmetric
underlap extension nanowire MOSFET with HfO2 spacer at 10 nm regime. The increased …
underlap extension nanowire MOSFET with HfO2 spacer at 10 nm regime. The increased …
Dielectric engineered Schottky barrier MOSFET for biosensor applications: proposal and investigation
In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier
MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric …
MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric …
Spacer-engineered reconfigurable silicon nanowire schottky barrier transistor as a label-free biosensor
In this paper, for the first time, we have investigated a Spacer-Engineered Reconfigurable
Silicon Nanowire Schottky Barrier Transistor (SE R-Si NW SBT) as a label-free Biosensor …
Silicon Nanowire Schottky Barrier Transistor (SE R-Si NW SBT) as a label-free Biosensor …
A FoM for investigation of SB TFET biosensor considering non-ideality
A new FoM to investigate a carefully engineered Schottky barrier (SB) TFET by accounting
for dc power consumption, and silicon area, which are the key consideration for energy …
for dc power consumption, and silicon area, which are the key consideration for energy …
Dual metal gate dielectric engineered dopant segregated Schottky barrier MOSFET with reduction in Ambipolar current
S Kale, MS Chandu - Silicon, 2022 - Springer
In this paper, to solve the problem of higher ambipolar leakage current (I ambipolar) of
Dielectric Engineered (DE) Dopant Segregated (DG) Schottky Barrier (SB) MOSFET (DE DS …
Dielectric Engineered (DE) Dopant Segregated (DG) Schottky Barrier (SB) MOSFET (DE DS …