Intrinsic infrared detectors
A Rogalski, J Piotrowski - Progress in Quantum Electronics, 1988 - Elsevier
The history of infrared detector development, followed the initial discovery of infrared
radiation by Herschel”'in 1800, using thermometers. The thermometer was the first of a trio of …
radiation by Herschel”'in 1800, using thermometers. The thermometer was the first of a trio of …
[图书][B] Infrared detectors
A Rogalski - 2000 - taylorfrancis.com
Infrared Detectors provides comprehensive coverage of this important aspect of infrared
technology, including details of recent research efforts directed toward improving the …
technology, including details of recent research efforts directed toward improving the …
Effect of structure on the quantum efficiency and R0A product of lead-tin chalcogenide photodiodes
A Rogalski, J Rutkowski - Infrared Physics, 1982 - Elsevier
The conditions are determined under which the quantum efficiency of lead-tin chalcogenide
photodiodes achieves its maximum. The effect of the structure of photodiodes on their …
photodiodes achieves its maximum. The effect of the structure of photodiodes on their …
Effects of a second valence band and resonant states on transport in undoped Pb1−xSnxTe
W Hoerstel, KH Herrmann - physica status solidi (a), 1980 - Wiley Online Library
The temperature dependence of the Hall coefficient of n‐and p‐type Pb1− xSnxTe samples
(x= 0.2) is analysed taking into account the temperature dependent effective masses and …
(x= 0.2) is analysed taking into account the temperature dependent effective masses and …
Electron-phonon interaction and electron mobility in quantum-well type-II PbTe/PbS structures
VV Bondarenko, VV Zabudskii, FF Sizov - Semiconductors, 1998 - Springer
Electron mobilities in PbTe layers were calculated, taking into account electron scattering by
longitudinal polar optical phonons, for low-dimensional structures—multiple PbTe/PbS …
longitudinal polar optical phonons, for low-dimensional structures—multiple PbTe/PbS …
Characteristics of n-Pb0. 88Sn0. 12Te Spin Flip Raman Laser Pumped by a TE CO2 Laser
K Yasuda, J Shirafuji - Japanese journal of applied physics, 1980 - iopscience.iop.org
Abstract Characteristic of n-Pb 0.88 Sn 0.12 Te spin-flip Raman (SFR) laser pumped by a TE
CO 2 laser has been studied. For the laser cavity, a crystal with ne= 10 17 cm-3 at 77 K and …
CO 2 laser has been studied. For the laser cavity, a crystal with ne= 10 17 cm-3 at 77 K and …
[PDF][PDF] Оптимізація термоелектричної добротності кристалічних плюмбум халькогенідів PbX (X= S, Se, Te)
ДМ Фреїк, ЛІ Никируй, РО Дзумедзей… - Фізика і хімія …, 2013 - irbis-nbuv.gov.ua
Розраховано та проаналізовано значення термоелектричних параметрів кристалів
халькогенідів свинцю n-типу провідності. Розглянуто ефективність термоелектричного …
халькогенідів свинцю n-типу провідності. Розглянуто ефективність термоелектричного …
Effect of plastic deformation on the transport phenomena in Pb0.95Sn0.05Se single crystals
KZ Papazian, RA Vardanian - Philosophical Magazine B, 1999 - Taylor & Francis
The temperature dependences of the Hall coefficient and specific resistance were
investigated in the range 77–350 K for plastically deformed Pb0. 95Sn0. 05Se single …
investigated in the range 77–350 K for plastically deformed Pb0. 95Sn0. 05Se single …