The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …

Different techniques for epitaxial growth of gallium nitride and main properties of GaN layers
as well as devices made on the base of GaN-structures are described in the review. A new …

Nowadays, GaN‐based devices are usually grown on sapphire or silicon‐carbide
substrates. These are either insulating or very expensive and not available in large …

Metalorganic chemical vapor phase deposition of thick, crack-free GaN on Si can be
performed either by patterning of the substrate and selective growth or by low-temperature …

Gallium nitride material devices and methods of forming the same are provided. The devices
include an electrode-defining layer. The electrode-defining layer typically has a via formed …

Group III-nitride material system possesses some unique properties, such as large spectrum
coverage from infrared to deep ultraviolet, wide energy band gap, high electron saturation …

Abstract Knowledge of the mechanical properties and fatigue behavior of thin films is
important for the design and reliability of microfabricated devices. This study uses the bulge …

Generally, GaN-based devices are grown on silicon carbide or sapphire substrates. But
these substrates are costly and insulating in nature and also are not available in large …