We present a self-consistent electric and optic model for superluminescent light-emitting
diodes (SLED) using 3D finite-element method. The carrier transport is calculated by the drift …

We report on the high-performance characteristics from superluminescent diodes (SLDs)
based on four-stack InAs/InGaAlAs chirped-barrier thickness quantum dash (Qdash) in a …

We demonstrate a GaN-based phosphor-free near-white-light light-emitting-diode (LED)
structure that operates in the visible wavelengths and offers broadening and flattening …

In this study, we demonstrate a GaN-based transverse junction blue LED array. This device
was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and …

We demonstrate a novel white-light light-emitting-diode (LED) structure that operates at
infrared wavelengths for broadening optical bandwidth performance. The nonuniform carrier …

We demonstrate 1.0 µm InGaAs high-power and broad spectral bandwidth
superluminescent diodes (SLDs). Based on the experimental analysis, it is clarified that the …

The concept of a superluminescent light-emitting diode (SLED) was proposed for the first
time. It can be briefly described as an edge-emitting semiconductor light source that …

In this study, we investigate the performance of GaAs-based bipolar cascade
superluminescent diodes with different cavity lengths. The device operates around the …

A unique design approach was proposed and applied to fabricate in a single chip ultra
broad bandwidth and high power Superluminescent Emitting Diodes (SLEDs) at 820 nm …

Исследованы суперлюминесцентные диоды, созданные на основе двойных
гетероструктур раздельного ограничения AlGaInAs/InP с напряженно …