For 50 years the exponential rise in the power of electronics has been fuelled by an increase
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …

Recently, with scaling down of semiconductor devices, need for nanotechnology has
increased enormously. For nanoscale devices especially, each of the layers should be as …

III-V semiconductors have high mobility and will be used in field effect transistors with the
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …

Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …

The reduction and removal of surface oxides from GaAs substrates by atomic layer
deposition (ALD) of Al 2 O 3 and Hf O 2 are studied using in situ monochromatic x-ray …

Al 2 O 3 was deposited on In 0.15 Ga 0.85 As∕ GaAs using atomic-layer deposition (ALD).
Without any surface preparation or postthermal treatment, excellent electrical properties of Al …

The effects of forming gas annealing (FGA) on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2
(HZO) films were examined. Although the H-incorporation during FGA degrades the …

In current work, the effect of the growth cycles of atomic-layer-deposition (ALD) derived
ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical …