[图书][B] Power electronics for renewable energy systems, transportation and industrial applications
Compiles current research into the analysis and design of power electronic converters for
industrial applications and renewable energy systems, presenting modern and future …
industrial applications and renewable energy systems, presenting modern and future …
Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs
An Experimental performance analysis of a parallel connection of two 1200/80 MΩ silicon
carbide SiC MOSFETs is presented. Static parallel connection was found to be …
carbide SiC MOSFETs is presented. Static parallel connection was found to be …
High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules
This paper presents the design process of a 312-kVA three-phase silicon carbide inverter
using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power …
using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power …
The cost-efficient gating drivers with master-slave current sharing control for parallel SiC MOSFETs
J Ao, Z Wang, J Chen, L Peng… - 2018 IEEE Transportation …, 2018 - ieeexplore.ieee.org
SiC MOSFET has shown its great potential in the transportation fields. In high power
scenario, several SiC MOSFETs need to be in parallel to extend current capability. However …
scenario, several SiC MOSFETs need to be in parallel to extend current capability. However …
Recent advances in power semiconductor technology
This chapter presents recent advances in power semiconductors technology with special
attention on wide bandgap (WBG) transistors. A short introduction to the state‐of‐the‐art …
attention on wide bandgap (WBG) transistors. A short introduction to the state‐of‐the‐art …
High-efficiency three-phase inverter with SiC MOSFET power modules for motor-drive applications
This paper presents the design process of a 312 kVA three-phase silicon carbide inverter
using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power …
using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power …
Dual-function gate driver for a power module with SiC junction field-effect transistors
Silicon Carbide high-power modules populated with several parallel-connected junction
field-effect transistors must be driven properly. Parasitic elements could act as drawbacks in …
field-effect transistors must be driven properly. Parasitic elements could act as drawbacks in …
Evaluation of thermal performance of all-GaN power module in parallel operation
PC Chou, S Cheng, SH Chen - Applied Thermal Engineering, 2014 - Elsevier
This work presents an extensive thermal characterization of a single discrete GaN high-
electron-mobility transistor (HEMT) device when operated in parallel at temperatures of 25° …
electron-mobility transistor (HEMT) device when operated in parallel at temperatures of 25° …
Development of High‐Power Density Interleaved dc/dc Converter with SiC Devices
T Kitamura, M Yamada, S Harada… - … Engineering in Japan, 2016 - Wiley Online Library
We developed an interleaved dc/dc converter with SiC devices. We applied full‐SiC
modules including MOSFETs and SBDs to the interleaved dc/dc converter to achieve a high …
modules including MOSFETs and SBDs to the interleaved dc/dc converter to achieve a high …
On reliability of sic power devices in power electronics
DP Sadik - 2017 - diva-portal.org
Abstract Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor material which has
several advantages such as higher maximum electric field, lower ON-state resistance …
several advantages such as higher maximum electric field, lower ON-state resistance …