2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges

PV Pham, SC Bodepudi, K Shehzad, Y Liu, Y Xu… - Chemical …, 2022 - ACS Publications
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

Review on spintronics: Principles and device applications

A Hirohata, K Yamada, Y Nakatani, IL Prejbeanu… - Journal of Magnetism …, 2020 - Elsevier
Spintronics is one of the emerging fields for the next-generation nanoelectronic devices to
reduce their power consumption and to increase their memory and processing capabilities …

Room-temperature antiferromagnetic memory resistor

X Marti, I Fina, C Frontera, J Liu, P Wadley, Q He… - Nature materials, 2014 - nature.com
The bistability of ordered spin states in ferromagnets provides the basis for magnetic
memory functionality. The latest generation of magnetic random access memories rely on an …

Future perspectives for spintronic devices

A Hirohata, K Takanashi - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
Spintronics is one of the emerging research fields in nanotechnology and has been growing
very rapidly. Studies of spintronics were started after the discovery of giant …

First-principles investigation of the very large perpendicular magnetic anisotropy at FeMgO and CoMgO interfaces

HX Yang, M Chshiev, B Dieny, JH Lee, A Manchon… - Physical Review B …, 2011 - APS
The perpendicular magnetic anisotropy (PMA) arising at the interface between
ferromagnetic transition metals and metallic oxides was investigated via first-principles …

Large voltage-induced magnetic anisotropy change in a few atomic layers of iron

T Maruyama, Y Shiota, T Nozaki, K Ohta, N Toda… - Nature …, 2009 - nature.com
In the field of spintronics, researchers have manipulated magnetization using spin-polarized
currents,,. Another option is to use a voltage-induced symmetry change in a ferromagnetic …

Interface-induced phenomena in magnetism

F Hellman, A Hoffmann, Y Tserkovnyak… - Reviews of modern …, 2017 - APS
This article reviews static and dynamic interfacial effects in magnetism, focusing on
interfacially driven magnetic effects and phenomena associated with spin-orbit coupling and …

A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction

BG Park, J Wunderlich, X Martí, V Holý, Y Kurosaki… - Nature materials, 2011 - nature.com
A spin valve is a microelectronic device in which high-and low-resistance states are realized
by using both the charge and spin of carriers. Spin-valve structures used in modern hard …

Current-induced spin–orbit torques

P Gambardella, IM Miron - Philosophical Transactions of …, 2011 - royalsocietypublishing.org
The ability to reverse the magnetization of nanomagnets by current injection has attracted
increased attention ever since the spin-transfer torque mechanism was predicted in 1996. In …

Theory of spin torque due to spin-orbit coupling

A Manchon, S Zhang - Physical Review B—Condensed Matter and Materials …, 2009 - APS
The combined effect of spin-orbit coupling and exchange interaction in a single
ferromagnetic layer is investigated. It is shown that, in nonequilibrium regime, the spin-orbit …