A review of memristor: material and structure design, device performance, applications and prospects
Y Xiao, B Jiang, Z Zhang, S Ke, Y Jin… - … and Technology of …, 2023 - Taylor & Francis
With the booming growth of artificial intelligence (AI), the traditional von Neumann
computing architecture based on complementary metal oxide semiconductor devices are …
computing architecture based on complementary metal oxide semiconductor devices are …
A neotype self-rectifying Cu3SnS4-MoO3 synaptic memristor for neuromorphic applications
W Wei, H Sun, X Dong, Q Lu, F Yang, Y Zhao… - Chemical Engineering …, 2024 - Elsevier
Self-rectifying memristor with integrated excellent bio-synaptic behaviors are great potential
to realize high-density memristor neuromorphic networks with self-inhibition of stealth …
to realize high-density memristor neuromorphic networks with self-inhibition of stealth …
High-temperature-resistant synaptic transistors for neuromorphic computing
X Liu, L Chu, W Yan, X Pi - Cell Reports Physical Science, 2024 - cell.com
Neuromorphic computing systems based on high-temperature-resistant synaptic devices
have emerged as energy-efficient and intelligent strategies for harsh-environment …
have emerged as energy-efficient and intelligent strategies for harsh-environment …
Size and Surface Chemistry Effects on the Synaptic Behavior of Halide Perovskite Thin Films
S Han, L Zhou, J Huang, Y Mu, Y Xie… - ACS Applied Electronic …, 2024 - ACS Publications
Halide perovskites are promising for energy-efficient and reconfigurable artificial synapses
due to the unique charge transport characteristic, ie, ionic-electronic coupling. This work …
due to the unique charge transport characteristic, ie, ionic-electronic coupling. This work …
A perovskite-based artificial photonic synapse with visible light modulation and ultralow current for neuromorphic computing
S Zhang, Y Zhao, Q Chen, Y Wang, J Jiang… - Microelectronic …, 2023 - Elsevier
Photonic artificial synapses have become favorable candidates for the basic architecture of
neuromorphic computing systems due to their high bandwidth, low power consumption, and …
neuromorphic computing systems due to their high bandwidth, low power consumption, and …
Nitrogen doping effect on InGaZnO-based artificial synapse for implementing reservoir computing and SVHN dataset pattern recognition
This work focused on plasma-induced nitrogen-doped indium gallium zinc oxide (InGaZnO:
N) based resistive switching devices. Nitrogen atoms in the InGaZnO: N can reduce the …
N) based resistive switching devices. Nitrogen atoms in the InGaZnO: N can reduce the …
Superlow Power Consumption Memristor Based on Borphyrin–Deoxyribonucleic Acid Composite Films as Artificial Synapse for Neuromorphic Computing
Z Wang, W Zhu, J Li, Y Shao, X Li, H Shi… - … Applied Materials & …, 2023 - ACS Publications
Memristor synapses based on green and pollution-free organic materials are expected to
facilitate biorealistic neuromorphic computing and to be an important step toward the next …
facilitate biorealistic neuromorphic computing and to be an important step toward the next …
Silver Nanowire Networks with Moisture-Enhanced Learning Ability
J Qiu, J Li, W Li, K Wang, T Xiao, H Su… - … Applied Materials & …, 2024 - ACS Publications
The human brain possesses a remarkable ability to memorize information with the
assistance of a specific external environment. Therefore, mimicking the human brain's …
assistance of a specific external environment. Therefore, mimicking the human brain's …
Unique Coexistence of Two Resistive Switching Modes in a Memristor Device Enables Multifunctional Neuromorphic Computing Properties
AH Jaafar, SKS Al Habsi, T Braben… - … Applied Materials & …, 2024 - ACS Publications
We report on hybrid memristor devices consisting of germanium dioxide nanoparticles
(GeO2 NP) embedded within a poly (methyl methacrylate)(PMMA) thin film. Besides …
(GeO2 NP) embedded within a poly (methyl methacrylate)(PMMA) thin film. Besides …
An ultra high-endurance memristor using back-end-of-line amorphous SiC
Integrating resistive memory or neuromorphic memristors into mainstream silicon technology
can be substantially facilitated if the memories are built in the back-end-of-line (BEOL) and …
can be substantially facilitated if the memories are built in the back-end-of-line (BEOL) and …