Power module packaging technologies have been experiencing extensive changes as the
novel silicon carbide (SiC) power devices with superior performance become commercially …

Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …

Increased switching speeds of wide bandgap (WBG) semiconductors result in a significant
magnitude of the displacement currents through power module parasitic capacitances that …

New packaging solutions and power module structures are required to fully utilize the
benefits of emerging commercially available wide bandgap semiconductor devices …

The paper presents a precise and efficient model of Double-Side Cooled (DSC) SiC
MOSFET, which incorporates the dynamics of both electrical and thermal variables. It offers …

Modern power converters designed with wide band-gap (WBG) semiconductors are known
to generate substantial conducted electromagnetic interference (EMI) as a side effect of high …

Wide band gap (WBG) semiconductors require packaging with reduced parasitic inductance
and capacitance. To achieve this, new packaging solutions are proposed that increase …

Electric field stress concentration is one of the causes of partial discharge (PD) in power
modules, which threatens the power modules' safe operation. Herein, this article …

The fast edge rates achievable by wide-bandgap semiconductors can produce significant
common-mode (CM) leakage currents through the baseplates of encompassing power …

This paper investigates gate driver design challenges encountered due to the fast switching
transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper …