An overview of state-of-the-art D-band radar system components
P Stadler, H Papurcu, T Welling, S Tejero Alfageme… - Chips, 2022 - mdpi.com
In this article, a literature study has been conducted including 398 radar circuit elements
from 311 recent publications (mostly between 2010 and 2022) that have been reported …
from 311 recent publications (mostly between 2010 and 2022) that have been reported …
Wideband and efficient 256-GHz subharmonic-based FMCW radar transceiver in 130-nm SiGe BiCMOS technology
This article proposes a fully integrated single-channel bistatic frequency-modulated
continuous-wave (FMCW) radar transceiver (TRX) that operates at a center frequency of 256 …
continuous-wave (FMCW) radar transceiver (TRX) that operates at a center frequency of 256 …
0.3-THz SiGe-based high-efficiency push–push VCOs with> 1-mW peak output power employing common-mode impedance enhancement
We present a novel method of maximizing the output power and efficiency of millimeter-
wave and terahertz signal sources, which are based on the push-push topology. In this …
wave and terahertz signal sources, which are based on the push-push topology. In this …
Fast Frequency and Phase Tracking Analog PLL for Direct Carrier Synchronization
W Ahmad, M Kinsinger, YL Rajendra… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
This article presents a wideband phase-locked loop (PLL) with a novel frequency acquisition
loop for a wide locking range and wide bandwidth in 130 nm SiGe BiCMOS technology. The …
loop for a wide locking range and wide bandwidth in 130 nm SiGe BiCMOS technology. The …
High performance resonant tunneling diode oscillators for THz applications
J Wang, K Alharbi, A Ofiare, H Zhou… - 2015 IEEE …, 2015 - ieeexplore.ieee.org
This paper presents monolithic microwave integrated circuit (MMIC) resonant tunneling
diode (RTD) oscillator with high performance: high power at high frequencies. The circuit …
diode (RTD) oscillator with high performance: high power at high frequencies. The circuit …
Resonant tunnelling diode terahertz sources for broadband wireless communications
E Wasige, KH Alharbi, A Al-Khalidi… - … , RF, Millimeter, and …, 2017 - spiedigitallibrary.org
This paper will discuss resonant tunnelling diode (RTD) sources being developed on a
European project iBROW (ibrow. project. eu) to enable short-range multi-gigabit wireless …
European project iBROW (ibrow. project. eu) to enable short-range multi-gigabit wireless …
A SiGe-based D-band fundamental-wave VCO with 9 dBm output power and-185 dBc/Hz FoMT
The design and measurement results of a fully-differential fundamental-wave VCO based on
the Colpitts topology are presented. The circuit is realized in a 0.13-μm SiGe BiCMOS …
the Colpitts topology are presented. The circuit is realized in a 0.13-μm SiGe BiCMOS …
A G-band high power frequency doubler in transferred-substrate InP HBT technology
M Hossain, K Nosaeva, B Janke… - IEEE Microwave and …, 2015 - ieeexplore.ieee.org
This letter presents a G-band balanced frequency doubler with high output power, realized
using a 800 nm transferred-substrate InP-HBT process. The doubler delivers 5{\rmdBm±3 …
using a 800 nm transferred-substrate InP-HBT process. The doubler delivers 5{\rmdBm±3 …
Research on Silicon‐Based Terahertz Communication Integrated Circuits
P ZHOU, J CHEN, S TANG, J YU… - Chinese Journal of …, 2022 - Wiley Online Library
With the increasing number of users and emerging new applications, the demand for mobile
data traffic is growing rapidly. The limited spectrum resources of the traditional microwave …
data traffic is growing rapidly. The limited spectrum resources of the traditional microwave …
A 330 GHz active frequency quadrupler in InP DHBT transferred-substrate technology
This paper presents a wideband 330 GHz frequency quadrupler using 0.8 μm transferred
substrate (TS) InP-HBT technology. The process includes a heat-spreading diamond layer …
substrate (TS) InP-HBT technology. The process includes a heat-spreading diamond layer …