Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation
Two-dimensional molybdenum disulfide (MoS2) is a potential alternative channel material to
silicon for future scaled transistors. Scaling down the gate dielectric and maintaining a high …
silicon for future scaled transistors. Scaling down the gate dielectric and maintaining a high …
Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems
Quantum electronics has significantly evolved over the last decades. Where initially the clear
focus was on light–matter interactions, nowadays approaches based on the electron's wave …
focus was on light–matter interactions, nowadays approaches based on the electron's wave …
[HTML][HTML] Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture
C Wilhelmer, D Waldhoer, M Jech… - Microelectronics …, 2022 - Elsevier
Experiments as well as theoretical calculations indicate that point defects in the amorphous
SiO 2 layer of electronic devices as well as in optical fibers are responsible for numerous …
SiO 2 layer of electronic devices as well as in optical fibers are responsible for numerous …
[HTML][HTML] Dynamic modeling of Si (100) thermal oxidation: Oxidation mechanisms and realistic amorphous interface generation
L Cvitkovich, D Waldhör, AM El-Sayed, M Jech… - Applied Surface …, 2023 - Elsevier
Silicon and its native oxide SiO 2 have been utilized in semiconductor technology since the
1950s and are still crucial for the development of novel device technologies today. Recent …
1950s and are still crucial for the development of novel device technologies today. Recent …
Experimental and theoretical study on air reaction wetting and brazing of Si3N4 ceramic by Ag-CuO filler metal: Performance and interfacial behavior
Reactive air brazing of Si 3 N 4 ceramic was successfully achieved by using Ag-CuO filler
metal. The effects of CuO content on the wettability of Ag-CuO/Si 3 N 4 system and the shear …
metal. The effects of CuO content on the wettability of Ag-CuO/Si 3 N 4 system and the shear …
Dangling bonds as possible contributors to charge noise in silicon and silicon–germanium quantum dot qubits
Spin qubits based on Si and Si1–x Ge x quantum dot architectures exhibit among the best
coherence times of competing quantum computing technologies, yet they still suffer from …
coherence times of competing quantum computing technologies, yet they still suffer from …
Quantum chemistry treatment of silicon-hydrogen bond rupture by nonequilibrium carriers in semiconductor devices
The interaction of charge carriers with hydrogen-related defects plays a key role in modern
semiconductor applications. Particularly in the field of micro-and nanoelectronics, where …
semiconductor applications. Particularly in the field of micro-and nanoelectronics, where …
Applicability of Shockley–Read–Hall theory for interface states
The Shockley–Read–Hall (SRH) model has been successfully used for decades to describe
the dynamics of interface states. Interestingly, the SRH model neglects structural relaxation …
the dynamics of interface states. Interestingly, the SRH model neglects structural relaxation …
Pinhole Formation by Nucleation-Driven Phase Separation in TOPCon and POLO Solar Cells: Structural Dynamics and Optimization
SiO x/poly-Si passivating carrier-selective contacts are one of the most promising concepts
for the next generation of high-efficiency silicon solar cells called TOPCon and POLO cells …
for the next generation of high-efficiency silicon solar cells called TOPCon and POLO cells …
Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory
Carrier induced defect creation at the semiconductor-oxide interface has been known as the
origin of electronic device degradation for a long time, but how exactly the interface lattice …
origin of electronic device degradation for a long time, but how exactly the interface lattice …