A comprehensive spectroscopic study is reported for MOCVD (Metal organic chemical vapor
deposition) grown AlN thin films prepared on sapphire (Al 2 O 3) and 6H–SiC substrates …

A method of two-step laser etching for bulk micromachining of 4H–SiC membranes through
a femtosecond (fs) laser with a wavelength of 532 nm, a pulse width of 290 fs and a …

Structural and optical properties of AlN films grown on c-sapphire by metalorganic chemical
vapor deposition (MOCVD) with varied thicknesses (0.4-10 µm) are investigated. AlN with …

For the first time, a trifunctional high-temperature AlN ceramic material that combines the
extreme wicking, evaporative, and cooling functionalities for enhancing the efficiency of …

Heterogeneously integrating the monocrystal AlN thin films on Si (100) substrates by ion-
slicing technique provides a promising high-quality material platform to achieve the …

Aluminum Nitride ceramic is an excellent material for heat dissipation in electronic
applications. The precision machining of AlN ceramic is difficult due to its high hardness and …

Lateral epitaxial growth is an effective method to reduce dislocations in Gallium Nitride
(GaN) films. Compared to heteroepitaxy, the homoepitaxial growth films have lower stress …

This paper analytically investigates an ultrashort pulsed laser nanoscale processing for
aluminum nitride (AIN) and lead zirconate titanate (PZT) ceramics. Processing …