Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC
J Yin, D Chen, H Yang, Y Liu, DN Talwar, T He… - Journal of Alloys and …, 2021 - Elsevier
A comprehensive spectroscopic study is reported for MOCVD (Metal organic chemical vapor
deposition) grown AlN thin films prepared on sapphire (Al 2 O 3) and 6H–SiC substrates …
deposition) grown AlN thin films prepared on sapphire (Al 2 O 3) and 6H–SiC substrates …
Two-step femtosecond laser etching for bulk micromachining of 4H–SiC membrane applied in pressure sensing
L Wang, Y Zhao, Y Yang, Y Zhao - Ceramics International, 2022 - Elsevier
A method of two-step laser etching for bulk micromachining of 4H–SiC membranes through
a femtosecond (fs) laser with a wavelength of 532 nm, a pulse width of 290 fs and a …
a femtosecond (fs) laser with a wavelength of 532 nm, a pulse width of 290 fs and a …
Crystalline and optical properties of AlN films with varying thicknesses (0.4-10 µm) grown on sapphire by metalorganic chemical vapor deposition
Structural and optical properties of AlN films grown on c-sapphire by metalorganic chemical
vapor deposition (MOCVD) with varied thicknesses (0.4-10 µm) are investigated. AlN with …
vapor deposition (MOCVD) with varied thicknesses (0.4-10 µm) are investigated. AlN with …
[HTML][HTML] Interfacially-engineered trifunctional high-temperature nano/microstructured aluminum nitride ceramic for evaporation-based technologies
R Fang, F Xu, C Luo, Y Li, Q Chen, J Zheng… - Journal of Materials …, 2024 - Elsevier
For the first time, a trifunctional high-temperature AlN ceramic material that combines the
extreme wicking, evaporative, and cooling functionalities for enhancing the efficiency of …
extreme wicking, evaporative, and cooling functionalities for enhancing the efficiency of …
Investigating the physical mechanism of ion-slicing in AlN and hetero-integrating AlN thin film on Si (100) substrate
Heterogeneously integrating the monocrystal AlN thin films on Si (100) substrates by ion-
slicing technique provides a promising high-quality material platform to achieve the …
slicing technique provides a promising high-quality material platform to achieve the …
The surface softening mechanism of AlN ceramic by laser treatment
Aluminum Nitride ceramic is an excellent material for heat dissipation in electronic
applications. The precision machining of AlN ceramic is difficult due to its high hardness and …
applications. The precision machining of AlN ceramic is difficult due to its high hardness and …
Ultrafast processes simulation under femtosecond laser irradiation of Gallium Nitride thin films
X Cai, C Ji, Z Wang, S Wang, J Pan, C Lei… - Computational Materials …, 2022 - Elsevier
Lateral epitaxial growth is an effective method to reduce dislocations in Gallium Nitride
(GaN) films. Compared to heteroepitaxy, the homoepitaxial growth films have lower stress …
(GaN) films. Compared to heteroepitaxy, the homoepitaxial growth films have lower stress …
[PDF][PDF] Study on Ablation Characteristics of Femyosecond Laser Nanoscale Processing for Aluminum Nitride and LeadZirconate Titanate Ceramics
CY Ho, L Zhou, CW Xiong, D Qiao - 2021 - scholar.archive.org
This paper analytically investigates an ultrashort pulsed laser nanoscale processing for
aluminum nitride (AIN) and lead zirconate titanate (PZT) ceramics. Processing …
aluminum nitride (AIN) and lead zirconate titanate (PZT) ceramics. Processing …