[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
β-Ga2O3 for wide-bandgap electronics and optoelectronics
Z Galazka - Semiconductor Science and Technology, 2018 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …
semiconducting oxide, which attracted recently much scientific and technological attention …
Progress in state-of-the-art technologies of Ga2O3 devices
C Wang, J Zhang, S Xu, C Zhang, Q Feng… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped -Ga2O3 MOSFETs
A Sn-doped (100)-Ga 2 O 3 epitaxial layer was grown via metal–organic vapor phase
epitaxy onto a single-crystal, Mg-doped semi-insulating (100)-Ga 2 O 3 substrate. Ga 2 O 3 …
epitaxy onto a single-crystal, Mg-doped semi-insulating (100)-Ga 2 O 3 substrate. Ga 2 O 3 …
Donors and deep acceptors in β-Ga2O3
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in β-Ga
2 O 3 through temperature dependent van der Pauw and Hall effect measurements of …
2 O 3 through temperature dependent van der Pauw and Hall effect measurements of …
[HTML][HTML] Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Sn-doped gallium oxide (Ga 2 O 3) wrap-gate fin-array field-effect transistors (finFETs) were
formed by top-down BCl 3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga …
formed by top-down BCl 3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga …
High-Mobility MOCVD β-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium
In this work, metalorganic chemical vapor deposition (MOCVD) of (010) β-Ga2O3 with fast
growth rates was investigated using trimethylgallium (TMGa) as the gallium (Ga) precursor …
growth rates was investigated using trimethylgallium (TMGa) as the gallium (Ga) precursor …
[HTML][HTML] MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor
We report on the growth of β-Ga 2 O 3 thin films using trimethylgallium (TMGa) as a source
for gallium and pure O 2 for oxidation. The growth rate of the films was found to linearly …
for gallium and pure O 2 for oxidation. The growth rate of the films was found to linearly …
Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
Si-and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on (010)-oriented substrates
We studied the growth of Si-and Sn-doped homoepitaxial β-Ga 2 O 3 layers on (010)-
oriented substrates by metal organic vapor phase epitaxy (MOVPE). At optimal growth …
oriented substrates by metal organic vapor phase epitaxy (MOVPE). At optimal growth …