As contact resistance becomes a bottle-neck in scaled CMOS devices, there is a need for
source/drain epitaxy with maximum dopant concentrations and optimized contacting …

Phosphorus has low solubility in silicon, but nonequilibrium incorporation of phosphorus
exhibits unusual high strain and low contact resistance for advanced Si-based metal-oxide …

Uniaxial stressors have received much interest over the last few years as a method to
enhance carrier mobility and, hence, drive current with minimal modification to the structure …

The relentless scaling of semiconductor devices pushes the doping level far above the
equilibrium solubility, yet the doped material must be sufficiently stable for subsequent …

An in-situ heavily phosphorous doped selective epitaxial Si: P process was developed to
reduce the source/drain contact resistance in the scaled-down 2D and 3D nMOSFET …

In this work, we investigated the chemical bonding states in highly P-doped Si thin films
epitaxially grown on Si (0 0 1) substrates using high-resolution X-ray photoelectron …

In situ doped epitaxial Si: P films with P concentrations> 1× 10 21 at./cm 3 are suitable for
source-drain stressors of n-FinFETs. These films combine the advantages of high …

We investigated the effect of millisecond (ms) laser annealing and doping concentration on
the chemical bonding states and dopant behaviors of P-doped epitaxial Si (Si: P) layers …

We investigated the lattice vibration and strain states in highly P-doped epitaxial Si films
using Raman scattering and X-ray diffraction (XRD) measurements. Raman analyses using …

Our long-term aim was to explore the Low Temperature Cyclic Deposition/Etch (CDE) of
tensile-Si: P, in order to engineer the Sources and Drains of n-type Field Effect Transistors …