Electron‐Sponge Nature of Polyoxometalates for Next‐Generation Electrocatalytic Water Splitting and Nonvolatile Neuromorphic Devices
W Ahmad, N Ahmad, K Wang, S Aftab, Y Hou… - Advanced …, 2024 - Wiley Online Library
Designing next‐generation molecular devices typically necessitates plentiful oxygen‐
bearing sites to facilitate multiple‐electron transfers. However, the theoretical limits of …
bearing sites to facilitate multiple‐electron transfers. However, the theoretical limits of …
A Network Intrusion Detection System with Broadband WO3–x/WO3–x‐Ag/WO3–x Optoelectronic Memristor
Real‐time intrusion detection system based on the von Neumann architecture struggle to
balance low power consumption and high computing speed. In this work, a strategy for …
balance low power consumption and high computing speed. In this work, a strategy for …
Indium–Gallium–Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine
Recently, neuromorphic computing has been proposed to overcome the drawbacks of the
current von Neumann computing architecture. Especially, spiking neural network (SNN) has …
current von Neumann computing architecture. Especially, spiking neural network (SNN) has …
Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device
Abstract Three-terminal (3T) structured electrochemical random access memory (ECRAM)
has been proposed as a synaptic device based on improved synaptic characteristics …
has been proposed as a synaptic device based on improved synaptic characteristics …
Vertically stacked nanosheet FET: Charge-trapping memory and synapse with linear weight adjustability for neuromorphic computing applications
This work shows the feasibility of a vertically stacked nanosheet field effect transistor
(NSFET) for charge-trapping memory and artificial synaptic devices. The artificial synapse's …
(NSFET) for charge-trapping memory and artificial synaptic devices. The artificial synapse's …
Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen Vacancies
This study focuses on InGaZnO-based synaptic devices fabricated using reactive
radiofrequency sputtering deposition with highly uniform and reliable multilevel memory …
radiofrequency sputtering deposition with highly uniform and reliable multilevel memory …
Monolithic 3D integration as a pathway to energy-efficient computing and beyond: From materials and devices to architectures and chips
As emerging technologies like artificial intelligence (AI) and big data continue to evolve, the
demand for high-performance computing (HPC) has been increasing, driving the …
demand for high-performance computing (HPC) has been increasing, driving the …
An evaluation of recent advancements in biological sensory organ-inspired neuromorphically tuned biomimetic devices
In the field of neuroscience, significant progress has been made regarding how the brain
processes information. Unlike computer processors, the brain comprises neurons and …
processes information. Unlike computer processors, the brain comprises neurons and …
Advanced design of high-performance artificial neuromorphic electronics
Recent years have witnessed the significant progress of nature artificial neuromorphic
systems with advances achieved in interdisciplinary fields, like neurosciences, electronics …
systems with advances achieved in interdisciplinary fields, like neurosciences, electronics …