Artificial neuron devices

K He, C Wang, Y He, J Su, X Chen - Chemical Reviews, 2023 - ACS Publications
Efforts to design devices emulating complex cognitive abilities and response processes of
biological systems have long been a coveted goal. Recent advancements in flexible …

Electron‐Sponge Nature of Polyoxometalates for Next‐Generation Electrocatalytic Water Splitting and Nonvolatile Neuromorphic Devices

W Ahmad, N Ahmad, K Wang, S Aftab, Y Hou… - Advanced …, 2024 - Wiley Online Library
Designing next‐generation molecular devices typically necessitates plentiful oxygen‐
bearing sites to facilitate multiple‐electron transfers. However, the theoretical limits of …

A Network Intrusion Detection System with Broadband WO3–x/WO3–x‐Ag/WO3–x Optoelectronic Memristor

W Yang, H Kan, G Shen, Y Li - Advanced Functional Materials, 2024 - Wiley Online Library
Real‐time intrusion detection system based on the von Neumann architecture struggle to
balance low power consumption and high computing speed. In this work, a strategy for …

Indium–Gallium–Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine

E Park, S Jang, G Noh, Y Jo, DK Lee, IS Kim… - Nano …, 2023 - ACS Publications
Recently, neuromorphic computing has been proposed to overcome the drawbacks of the
current von Neumann computing architecture. Especially, spiking neural network (SNN) has …

Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device

H Kim, J Seo, S Cho, S Jeon, J Woo, D Lee - Scientific Reports, 2023 - nature.com
Abstract Three-terminal (3T) structured electrochemical random access memory (ECRAM)
has been proposed as a synaptic device based on improved synaptic characteristics …

Vertically stacked nanosheet FET: Charge-trapping memory and synapse with linear weight adjustability for neuromorphic computing applications

MHR Ansari, H Li, N El-Atab - IEEE Transactions on Electron …, 2023 - ieeexplore.ieee.org
This work shows the feasibility of a vertically stacked nanosheet field effect transistor
(NSFET) for charge-trapping memory and artificial synaptic devices. The artificial synapse's …

Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen Vacancies

C Mahata, H So, S Kim, S Kim, S Cho - Materials, 2023 - mdpi.com
This study focuses on InGaZnO-based synaptic devices fabricated using reactive
radiofrequency sputtering deposition with highly uniform and reliable multilevel memory …

Monolithic 3D integration as a pathway to energy-efficient computing and beyond: From materials and devices to architectures and chips

Y Fan, R An, J Tang, Y Li, T Liu, B Gao, H Qian… - Current Opinion in Solid …, 2024 - Elsevier
As emerging technologies like artificial intelligence (AI) and big data continue to evolve, the
demand for high-performance computing (HPC) has been increasing, driving the …

An evaluation of recent advancements in biological sensory organ-inspired neuromorphically tuned biomimetic devices

A Sinha, J Lee, J Kim, H So - Materials Horizons, 2024 - pubs.rsc.org
In the field of neuroscience, significant progress has been made regarding how the brain
processes information. Unlike computer processors, the brain comprises neurons and …

Advanced design of high-performance artificial neuromorphic electronics

Y Cao, H Fu, X Fan, X Tian, J Zhao, J Lu, Z Liang, B Xu - Materials Today, 2024 - Elsevier
Recent years have witnessed the significant progress of nature artificial neuromorphic
systems with advances achieved in interdisciplinary fields, like neurosciences, electronics …