Multiple quantum wells (MQWs) are commonly employed in InGaAs/AlGaAs semiconductor
materials for devices such as semiconductor lasers and solar cells. However, the Indium …

InAs/InGaAs heterostructures with quantum dots (QDs) have been studied for quite some
time for light-emitting diodes operating from the near to the far infrared range. However, the …

Hereby, we present a comprehensive experimental and theoretical study of the electronic
structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs …

This study investigates the vertical inter-QDs spacing (VIDS) in a coupled bilayer quantum
dots (CBQD) heterostructure using cross-sectional High Resolution Transmission Electron …

We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by
molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with …

This study describes the effect of a thin GaAs spacer of 4.5 nm thickness in a bilayer-coupled
InAs quantum dot (QD) heterostructure. Here, we report the first demonstration of InAs/GaAs …

Ultrafast carrier dynamics is found to be crucial for influencing the efficiency of quantum dot
(QD)-based optoelectronic devices. Here, we have studied picosecond resolved dynamics …

We demonstrate the correlative research on the multi-stacked vertically coupled InAs
quantum dots (VCQDs) capped by 15 nm combinational capping layer of In (0.21) Al (0.21) …

This paper investigates the effect of GaAsBi strain reduction layers (SRLs) on InAs QDs with
different Bi fluxes to achieve nanostructures with improved temperature stability. The SRLs …

The influence of digital alloy capping technique on the strain-coupled bilayer InAs quantum
dots (QDs) has been presented. Multiple capping layers of different composition have been …