Domain wall memory: Physics, materials, and devices

D Kumar, T Jin, R Sbiaa, M Kläui, S Bedanta, S Fukami… - Physics Reports, 2022 - Elsevier
Digital data, generated by corporate and individual users, is growing day by day due to a
vast range of digital applications. Magnetic hard disk drives (HDDs) currently fulfill the …

Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing

D Wang, R Tang, H Lin, L Liu, N Xu, Y Sun… - Nature …, 2023 - nature.com
Neuromorphic computing using nonvolatile memories is expected to tackle the memory wall
and energy efficiency bottleneck in the von Neumann system and to mitigate the stagnation …

Memory functions of magnetic skyrmions

W Koshibae, Y Kaneko, J Iwasaki… - Japanese Journal of …, 2015 - iopscience.iop.org
We study, by microsimulation on the chiral magnets, the elementary functions of magnetic
skyrmions and the design principles of skyrmionic memory devices. The external stimuli …

Emerging three-terminal magnetic memory devices

SW Lee, KJ Lee - Proceedings of the IEEE, 2016 - ieeexplore.ieee.org
Spin-transfer torques can switch magnetizations via a current passing through a magnetic
tunnel junction, an effect that is being pursued as the switching mechanism in spin-transfer …

Field-free spin–orbit torque switching of perpendicular magnetization by the Rashba interface

B Cui, H Wu, D Li, SA Razavi, D Wu… - … applied materials & …, 2019 - ACS Publications
Current-induced spin–orbit torques (SOTs) enable efficient electrical manipulation of the
magnetization in heterostructures with a perpendicular magnetic anisotropy through the …

Synergy of Spin‐Orbit Torque and Built‐In Field in Magnetic Tunnel Junctions with Tilted Magnetic Anisotropy: Toward Tunable and Reliable Spintronic Neurons

D Wang, Z Wang, N Xu, L Liu, H Lin, X Zhao… - Advanced …, 2022 - Wiley Online Library
Owing to programmable nonlinear dynamics, magnetic domain wall (DW)‐based devices
can be configured to function as spintronic neurons, promising to execute sophisticated …

Imaging current control of magnetization in Fe3GeTe2 with a widefield nitrogen-vacancy microscope

IO Robertson, C Tan, SC Scholten, AJ Healey… - 2D …, 2022 - iopscience.iop.org
Van der Waals (vdW) magnets are appealing candidates for realising spintronic devices that
exploit current control of magnetization (eg switching or domain wall motion), but so far …

Magnetization switching schemes for nanoscale three-terminal spintronics devices

S Fukami, H Ohno - Japanese Journal of Applied Physics, 2017 - iopscience.iop.org
Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising
approach to realize ultralow-power and high-performance electronics. While two-terminal …

Progress in Spin Logic Devices Based on Domain-Wall Motion

BB Vermeulen, B Sorée, S Couet, K Temst, VD Nguyen - Micromachines, 2024 - mdpi.com
Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility,
low switching energy, and collective behavior of magnetization. These properties allow the …

Temperature-dependent magnetization reversal process and coercivity mechanism in Nd-Fe-B hot-deformed magnets

S Okamoto, R Goto, N Kikuchi, O Kitakami… - Journal of Applied …, 2015 - pubs.aip.org
Low coercivity and its large temperature dependence of a Nd 2 Fe 14 B magnet with respect
to its magnetic anisotropy field have been addressed as the coercivity problem. To elucidate …