First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
One of the fundamental properties of semiconductors is their ability to support highly tunable
electric currents in the presence of electric fields or carrier concentration gradients. These …
electric currents in the presence of electric fields or carrier concentration gradients. These …
Ultrawide-bandgap semiconductors: An overview
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …
renaissance exemplified by advances in material-level understanding, extensions of known …
Ionizing radiation damage effects on GaN devices
Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high
power and high frequency applications, with higher breakdown voltages and two …
power and high frequency applications, with higher breakdown voltages and two …
[图书][B] Gallium nitride and silicon carbide power devices
BJ Baliga - 2016 - books.google.com
During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …
of gallium nitride and silicon carbide device structures, resulting in experimental …
Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes
Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
Progress in efficient doping of high aluminum-containing group III-nitrides
YH Liang, E Towe - Applied Physics Reviews, 2018 - pubs.aip.org
The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two
that are critical to a number of technologies in modern life—the other being silicon. Light …
that are critical to a number of technologies in modern life—the other being silicon. Light …
Trapping effects in the transient response of AlGaN/GaN HEMT devices
JM Tirado, JL Sanchez-Rojas… - IEEE Transactions on …, 2007 - ieeexplore.ieee.org
In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor
(HEMT) device is presented. Drain-current dispersion effects are investigated when gate or …
(HEMT) device is presented. Drain-current dispersion effects are investigated when gate or …
Ultrafast response self-powered UV photodetectors based on GaS/GaN heterojunctions
Z Lin, T Lin, T Lin, X Tang, G Chen, J Xiao… - Applied Physics …, 2023 - pubs.aip.org
Self-powered ultraviolet (UV) photodetectors (PDs) based on GaN have been of great
importance in the application of UV communication, thanks to its wide direct bandgap and …
importance in the application of UV communication, thanks to its wide direct bandgap and …
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well
(QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current …
(QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current …
High-temperature modeling of algan/gan hemts
S Vitanov, V Palankovski, S Maroldt, R Quay - Solid-State Electronics, 2010 - Elsevier
Wide bandgap, high saturation velocity, and high thermal stability are some of the properties
of GaN, which make it an excellent material for high-power, high-frequency, and high …
of GaN, which make it an excellent material for high-power, high-frequency, and high …