Atomic layer processes for material growth and etching—a review
F Rahman, JC Runyon - IEEE Transactions on Semiconductor …, 2021 - ieeexplore.ieee.org
Material growth and etching processes that cause the formation or removal of one atomic or
molecular layer at a time are becoming commonplace. Starting from the research labs, such …
molecular layer at a time are becoming commonplace. Starting from the research labs, such …
Atomic Layer Deposition of La2O3 Film with Precursor La(thd)3-DMEA
W Zhao, J Jiang, Y Luo, J Li, Y Ding - Coatings, 2023 - mdpi.com
In this paper, a new precursor La (thd) 3-DMEA (thd= 2, 2, 6, 6-tetramethyl-3, 5-
heptanedione, DMEA= N, N′-dimethylethylenediamine) was synthesized and …
heptanedione, DMEA= N, N′-dimethylethylenediamine) was synthesized and …
Thermal atomic layer deposition of Er 2 O 3 films from a volatile, thermally stable enaminolate precursor
N Jayakodiarachchi, R Liu, CD Dharmadasa… - Dalton …, 2023 - pubs.rsc.org
Thin films of Er2O3 films were grown by atomic layer deposition using the Er precursor tris (1-
(dimethylamino)-3, 3-dimethylbut-1-en-2-olate) erbium (III)(Er (L1) 3), with water as the co …
(dimethylamino)-3, 3-dimethylbut-1-en-2-olate) erbium (III)(Er (L1) 3), with water as the co …
Tailoring the competition between electric dipole and magnetic dipole emission in -doped cubic sesquioxide ( = )
With an explosive increase in demand for efficient luminescent materials in integrated
optical systems, research on lanthanide ion-doped cubic sesquioxide ceramics has become …
optical systems, research on lanthanide ion-doped cubic sesquioxide ceramics has become …
Contributions of bulk and surface energies in stabilizing metastable polymorphs: A comparative study of group 3 sesquioxides , and
F Al-Quaiti, PY Chen, JG Ekerdt, AA Demkov - Physical Review Materials, 2022 - APS
Sesquioxides are an important class of compounds which are used in various applications
such as optical glasses, high-power electronics, and gate dielectrics. Using density …
such as optical glasses, high-power electronics, and gate dielectrics. Using density …
The syntheses, characterization, thermal properties of asymmetrical La β-diketonate and their application as ALD precursor for La2O3 films
W Zhao, H Zhou, J Li, Y Lu, Y Ding - Transition Metal Chemistry, 2024 - Springer
In this paper, three complexes La 2 (thd) 6 (thd= 2, 2, 6, 6-tetramethyl-3, 5-heptanedione, 1),
La 2 (tmod) 6 (tmod= 2, 2, 6, 6-tetramethyl octane-3, 5-dionates, 2) and La 2 (ibpm) 6 (ibpm …
La 2 (tmod) 6 (tmod= 2, 2, 6, 6-tetramethyl octane-3, 5-dionates, 2) and La 2 (ibpm) 6 (ibpm …
Theoretical study of GaN (0001) surface reconstructions and La and Ga adatoms under N-and Ga-rich conditions
F Al-Quaiti, AA Demkov - Physical Review Materials, 2021 - APS
Using density functional theory, we determined that 2× 2 and (3× 3) R 30∘ surface
reconstructions of bulk-terminated GaN (0001) are degenerate in energy but differ in their …
reconstructions of bulk-terminated GaN (0001) are degenerate in energy but differ in their …
Theoretical investigation of III-V and metal oxide compounds
FF Al-Quaiti - 2023 - repositories.lib.utexas.edu
Invented in 1947, the transistor quickly became an integral component of electronic devices.
An every-increasing demand for more powerful, compact, and versatile electronics has …
An every-increasing demand for more powerful, compact, and versatile electronics has …