GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …

The past decades have witnessed a tremendous development of GaN-based power
electronic devices grown on Si substrate. This article provides a concise introduction …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

Vertical gallium nitride (GaN) power devices have attracted increased attention due to their
superior high-voltage and high-current capacity as well as easier thermal management than …

Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …

Dislocations that cause a reverse leakage current in vertical pn diodes on a GaN free-
standing substrate were investigated. Under a high reverse bias, dot-like leakage spots …

Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …

An essential ruggedness of power devices is the capability of safely withstanding the surge
energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power …

This letter demonstrates vertical GaN junction barrier Schottky (JBS) rectifiers fabricated with
novel ion implantation techniques. We used two different methods to form the lateral pn grids …

Silicon-based power devices are reaching their fundamental performance limit. The use of
wide-bandgap semiconductors with superior material properties over silicon offers the …