Semiconductor devices with field plates
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Gallium nitride diodes and integrated components
CS Suh, J Honea, U Mishra - US Patent App. 11/856,695, 2009 - Google Patents
(57) ABSTRACT A diode device can include an enhancement mode gallium nitride
transistor having a gate, a drain and a source, wherein the gate is connected to the drain to …
transistor having a gate, a drain and a source, wherein the gate is connected to the drain to …
Semiconductor devices with guard rings
U Mishra, S Chowdhury, Y Dora - US Patent 8,901,604, 2014 - Google Patents
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High power semiconductor electronic components with increased reliability
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Electrode configurations for semiconductor devices
Y Dora, Y Wu - US Patent 8,716,141, 2014 - Google Patents
Abstract A III-N semiconductor device can include an electrode-defining layer having a
thickness on a surface of a III-N material structure. The electrode-defining layer has a recess …
thickness on a surface of a III-N material structure. The electrode-defining layer has a recess …
Enhancement-mode III-nitride devices
RK Lal - US Patent 9,087,718, 2015 - Google Patents
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Electronic devices and components for high efficiency power circuits
Y Wu - US Patent 8,816,497, 2014 - Google Patents
BACKGROUND As the amount of worldwide electrical power consumption has been
constantly increasing, power Supplies and power converters have become increasingly …
constantly increasing, power Supplies and power converters have become increasingly …
Cascode structures with GaN cap layers
S Sriram - US Patent 9,755,059, 2017 - Google Patents
(57) ABSTRACT A transistor device including a cap layer is described. One embodiment of
such a device includes cap layer between a gate and a semiconductor layer. In one …
such a device includes cap layer between a gate and a semiconductor layer. In one …
Transistors with isolation regions
U Mishra, S Chowdhury - US Patent 8,742,460, 2014 - Google Patents
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