Efficient 3D-TLM modeling and simulation for the thermal management of microwave AlGaN/GaN HEMT used in high power amplifiers SSPA
K Belkacemi, R Hocine - Journal of Low Power Electronics and …, 2018 - mdpi.com
A three-dimensional thermal simulation investigation for the thermal management of GaN-on-
SiC monolithic microwave integrated circuits (MMICs) of consisting multi-fingers (HEMTs) is …
SiC monolithic microwave integrated circuits (MMICs) of consisting multi-fingers (HEMTs) is …
Thermal and optical characterization of white and blue multi-chip LED light engines
A clear understanding of thermal characteristics for light emitting diodes (LEDs) is at the
center of attention for lighting industry. Especially accurate evaluation of the junction …
center of attention for lighting industry. Especially accurate evaluation of the junction …
Fast Unveiling of Tmax in GaN HEMT Devices via the Electrical Measurement-Assisted Two-Heat Source Model
Gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices, which have wide
application potential from power amplifiers to satellite, need to be thoroughly examined in …
application potential from power amplifiers to satellite, need to be thoroughly examined in …
Non-equilibrium thermal transport study in steady state GaN MISHEMT channel layer based on electron Monte Carlo and phonon BTE
G Chen, J Chen, Z Jiang, Z Wang - International Journal of Thermal …, 2024 - Elsevier
An electro-thermal coupling simulator for GaN devices based on electron Monte Carlo (e-
MC) simulations is established. Taking GaN Metal Insulator Semiconductor High Electron …
MC) simulations is established. Taking GaN Metal Insulator Semiconductor High Electron …
A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs
M Azarifar, N Donmezer - Microelectronics Reliability, 2017 - Elsevier
Two-dimensional approaches are widely used in the numerical thermal models of
AlGaN/GaN high electron mobility transistors (HEMTs) to reduce the high computational cost …
AlGaN/GaN high electron mobility transistors (HEMTs) to reduce the high computational cost …
Thermal characterization of field plated AlGaN/GaN HEMTs
C Dundar, N Donmezer - 2019 18th IEEE Intersociety …, 2019 - ieeexplore.ieee.org
The performance of AlGaN/GaN HEMTs (High Electron Mobility Transistors), frequently used
in high voltage and frequency power applications, can be enhanced with the use of field …
in high voltage and frequency power applications, can be enhanced with the use of field …
Unveiling Tmax Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements
This paper presents a method to reveal the channel temperature profile of high electron
mobility transistors (HEMTs) in a multi-stage monolithic microwave integrated circuit (MMIC) …
mobility transistors (HEMTs) in a multi-stage monolithic microwave integrated circuit (MMIC) …
On the individual droplet growth modeling and heat transfer analysis in dropwise condensation
The low convective coefficient at the condenser part of spreaders and vapor chambers due
to film blanket blocking encourages utilizing dropwise condensation (DWC). Challenges …
to film blanket blocking encourages utilizing dropwise condensation (DWC). Challenges …
Data-Driven Design of High Electron Mobility Transistor Devices Using Physics-Informed Gaussian Process Modeling
High electron-mobility transistors (HEMTs) have emerged as an attractive alternative for high-
efficiency power systems, due to their good material properties to perform at high voltages …
efficiency power systems, due to their good material properties to perform at high voltages …
A Multiscale Finite Element Modeling Approach for Thermal Management in Heterogeneous Integrated Circuits
PJ Bonavita - 2019 - rave.ohiolink.edu
Modern radio frequency (RF) microsystems are challenged to deliver improved performance
across an ever-changing landscape of applications and requirements. As the demand for …
across an ever-changing landscape of applications and requirements. As the demand for …