Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
R Engel-Herbert, Y Hwang, S Stemmer - Journal of applied physics, 2010 - pubs.aip.org
Methods to extract trap densities at high-permittivity (k) dielectric/III-V semiconductor
interfaces and their distribution in the semiconductor band gap are compared. The …
interfaces and their distribution in the semiconductor band gap are compared. The …
The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System
In this paper, we present a review of experimental results examining charged defect
components in the Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system …
components in the Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system …
Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation
Effects of nitrogen incorporation on the interface chemical bonding states, optical dielectric
function, band alignment, and electrical properties of sputtering-derived HfTiO high-k gate …
function, band alignment, and electrical properties of sputtering-derived HfTiO high-k gate …
Border traps in Al2O3/In0. 53Ga0. 47As (100) gate stacks and their passivation by hydrogen anneals
Charge-trapping defects in Pt/Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor
capacitors and their passivation by hydrogen are investigated in samples with abrupt …
capacitors and their passivation by hydrogen are investigated in samples with abrupt …
A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0 …
In this work, we present the results of an investigation into the effectiveness of varying
ammonium sulphide (NH 4) 2 S concentrations in the passivation of n-type and p-type In …
ammonium sulphide (NH 4) 2 S concentrations in the passivation of n-type and p-type In …
Bridging the gap between surface physics and photonics
P Laukkanen, M Punkkinen, M Kuzmin… - Reports on Progress …, 2024 - iopscience.iop.org
Use and performance criteria of photonic devices increase in various application areas such
as information and communication, lighting, and photovoltaics. In many current and future …
as information and communication, lighting, and photovoltaics. In many current and future …
Passivation of III–V surfaces with crystalline oxidation
P Laukkanen, MPJ Punkkinen, M Kuzmin… - Applied Physics …, 2021 - pubs.aip.org
Control of interfacial physicochemical properties associated with device materials to
minimize the impact of point defects on device performance has been a dominant theme in …
minimize the impact of point defects on device performance has been a dominant theme in …
A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to and InP Capacitors
By taking into account simultaneously the effects of border traps and interface states, the
authors model the alternating current capacitance-voltage (CV) behavior of high-mobility …
authors model the alternating current capacitance-voltage (CV) behavior of high-mobility …
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0. 53Ga0. 47As metal-oxide …
The inversion behaviors of atomic-layer-deposition Al 2 O 3/n-In 0.53 Ga 0.47 As metal-
oxide-semiconductor capacitors are studied by various surface treatments and …
oxide-semiconductor capacitors are studied by various surface treatments and …
On the interface state density at In0. 53Ga0. 47As/oxide interfaces
The authors model the capacitance-voltage (CV) behavior of In 0.53 Ga 0.47 As metal-oxide-
semiconductor (MOS) structures and compare the results to experimental C V-curves. Due to …
semiconductor (MOS) structures and compare the results to experimental C V-curves. Due to …