This paper presents a new approach based on a novel optimization algorithm (Equilibrium
optimizer) to determine the critical characteristic parameters of the Au/GaN/GaAs Schottky …

In this paper, two Schottky structures of Au/n-GaAs (sample A) and Au/0.8 nm-GaN/n-GaAs
(sample B) were fabricated and electrically characterized by current–voltage measurements …

The electrical properties of Al/Mg 2 Si/p-Si Schottky diodes fabricated were examined at
various frequencies and temperatures. The structural and surface morphological features of …

In this paper, a new model of thermionic emission current for non-ideal Schottky contacts
and a method of extracting electrical parameters are presented. The Au/n-GaAs Schottky …

Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized
over a wide temperature range. As a result, the reverse current Iinv increments from 1× 10 …

This work deals with estimation of the Schottky diode (Au| GaN| GaAs) optimal parameters.
For this purpose, advanced swarm intelligence (SI) algorithms have been applied, ie, Harris …

In this study, a thin barrier AlGaN/GaN heterojunction diode with a NiO anode is proposed.
NiO as an anode combined with a 5 nm AlGaN barrier layer can significantly deplete two …

We report on the electrical behavior of Metal/n‐GaAs Schottky structure, using Silvaco‐Atlas
software. To study the effect of metal work function ϕm on the performance of various …

In this paper, we give a systematical description of Ni| 6 H-SiC Schottky diode by current–
voltage I (V) characteristics at room temperature and capacitance–voltage C (V) …

Abstract The Au/GaN/GaAs Schottky diode is a fundamental electronic component with
versatile applications. In this study we delve into the parameter estimation of Au/GaN/GaAs …