Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical …
In order to handle high power with good thermal stability at RF & microwave frequencies
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
Thermal Transport of AlN/Graphene/3C-SiC Typical Heterostructures with Different Crystallinities of Graphene
B Yang, C Peng, M Song, Y Tang, Y Wu… - … Applied Materials & …, 2022 - ACS Publications
It is proven that introduction of graphene into typical heterostructures can effectively reduce
the high interfacial thermal resistance in semiconductor chips. The crystallinity of graphene …
the high interfacial thermal resistance in semiconductor chips. The crystallinity of graphene …
Polarization induced doping and high-k passivation engineering on T-gate MOS-HEMT for improved RF/microwave performance
High electron-mobility transistors (HEMTs) based on III-nitrides are well-known as ideal
choices for high-power, radio-frequency applications. HEMTs, on the other hand, must deal …
choices for high-power, radio-frequency applications. HEMTs, on the other hand, must deal …
Ultrascaled 10 nm T‐gate E‐mode InAlN/AlN HEMT with polarized doped buffer for high power microwave applications
The DC and RF performance of ultra‐scaled 10 nm E mode InAlN/AlN HEMT with polarized
doped buffer has been investigated. The proposed device has the feature of polarized …
doped buffer has been investigated. The proposed device has the feature of polarized …
A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors
Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) are regarded as
fundamental semiconductor devices for future power electronic applications. Consequently …
fundamental semiconductor devices for future power electronic applications. Consequently …
Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET
In this article, we investigate the feasibility of enhancing the linearity Figures of Merit (FoMs)
by introducing pocket implant in the source/drain regions of the FDSOI MOSFET with ground …
by introducing pocket implant in the source/drain regions of the FDSOI MOSFET with ground …
[HTML][HTML] Thermal oxidation of [0001] GaN in water vapor compared with dry and wet oxidation: Oxide properties and impact on GaN
Ł Janicki, R Korbutowicz, M Rudziński… - Applied Surface …, 2022 - Elsevier
Conventionally thermal oxidation of GaN is performed in either dry or wet oxygen ambient. In
this work thermal oxidation in water vapor ambient, together with the two above mentioned …
this work thermal oxidation in water vapor ambient, together with the two above mentioned …
E‐Mode‐Operated Advanced III‐V Heterostructure Quantum Well Devices for Analog/RF and High‐Power Switching Applications
A Mohanbabu, N Vinodhkumar… - … for Integrated Circuit …, 2023 - Wiley Online Library
The most significant invention of the 20 th century was the transistor. After invented the first
transistor, the technology advancement based on transistor arrived very quickly in the …
transistor, the technology advancement based on transistor arrived very quickly in the …
[PDF][PDF] Influence of pulsed laser deposited hafnium oxide thin film as gate dielectric on the fabrication of Al0. 1Ga0. 9N/GaN MOS-HEMT
Gallium Nitride (GaN) and Aluminium doped Gallium Nitride (Al0. 1Ga0. 9N) have been
successfully grown and optimized for the realization of metal oxide high electron mobility …
successfully grown and optimized for the realization of metal oxide high electron mobility …
High-performance gallium nitride high-electron-mobility transistors with a thin channel and an AlN back barrier
Y Zhang, Y Dong, K Chen, K Dang, Y Yao… - Applied Physics …, 2023 - pubs.aip.org
In this work, high-performance high-electron-mobility transistors (HEMTs) with a thin GaN
channel and an AlN back barrier were fabricated and investigated in detail. The AlN back …
channel and an AlN back barrier were fabricated and investigated in detail. The AlN back …