In order to handle high power with good thermal stability at RF & microwave frequencies
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …

It is proven that introduction of graphene into typical heterostructures can effectively reduce
the high interfacial thermal resistance in semiconductor chips. The crystallinity of graphene …

High electron-mobility transistors (HEMTs) based on III-nitrides are well-known as ideal
choices for high-power, radio-frequency applications. HEMTs, on the other hand, must deal …

The DC and RF performance of ultra‐scaled 10 nm E mode InAlN/AlN HEMT with polarized
doped buffer has been investigated. The proposed device has the feature of polarized …

Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) are regarded as
fundamental semiconductor devices for future power electronic applications. Consequently …

In this article, we investigate the feasibility of enhancing the linearity Figures of Merit (FoMs)
by introducing pocket implant in the source/drain regions of the FDSOI MOSFET with ground …

Conventionally thermal oxidation of GaN is performed in either dry or wet oxygen ambient. In
this work thermal oxidation in water vapor ambient, together with the two above mentioned …

The most significant invention of the 20 th century was the transistor. After invented the first
transistor, the technology advancement based on transistor arrived very quickly in the …

Gallium Nitride (GaN) and Aluminium doped Gallium Nitride (Al0. 1Ga0. 9N) have been
successfully grown and optimized for the realization of metal oxide high electron mobility …

In this work, high-performance high-electron-mobility transistors (HEMTs) with a thin GaN
channel and an AlN back barrier were fabricated and investigated in detail. The AlN back …