With weak interlayer interactions and unique physical properties, bismuth oxyselenide (Bi 2
O 2 Se) has become a rising star as a novel quasi-2D material, possessing high symmetry …

The combination of strong spin-orbit coupling, large g factors, and the coupling to a
superconductor can be used to create a topologically protected state in a semiconductor …

We demonstrate the in situ growth of ultra-thin InAs nanowires with an epitaxial Al film by
molecular-beam epitaxy. Our InAs nanowire diameter (∼ 30 nm) is much thinner than before …

Semiconductor nanowires featuring strong spin–orbit interactions (SOI), represent a
promising platform for a broad range of novel technologies, such as spintronic applications …

InAs nanowire-based back-gated field-effect transistors realized starting from individual InAs
nanowires are investigated at different temperatures and as building blocks of inverter …

Semiconductor Bi2O2Se nanolayers of high crystal quality have been realized via epitaxial
growth. These two-dimensional (2D) materials possess excellent electron transport …

Low-dimensional narrow band gap III–V compound semiconductors, such as InAs and InSb,
have attracted much attention as one of promising platforms for studying Majorana zero …

We report on phase-coherent transport studies of a Bi2O2Se nanoplate and on observation
of universal conductance fluctuations and spin–orbit interaction induced reduction in …

Understanding of the electrical contact properties of semiconductor nanowire (NW) field-
effect transistors (FETs) plays a crucial role in the use of semiconducting NWs as building …

Quantum dots (QDs) made from semiconductors are among the most promising platforms for
the development of quantum computing and simulation chips, and they have the advantages …