Calcium fluoride as high-k dielectric for 2D electronics

C Wen, M Lanza - Applied Physics Reviews, 2021 - pubs.aip.org
Calcium fluoride is a dielectric material with a wide bandgap ($12.1 eV) and a relatively high
dielectric constant ($6.8) that forms a van der Waals interface with two-dimensional (2D) …

Novel ALD Process for Depositing CaF2 Thin Films

T Pilvi, K Arstila, M Leskelä, M Ritala - Chemistry of materials, 2007 - ACS Publications
Metal fluorides, like CaF2, are interesting dielectric materials which are optically transparent
over a wide wavelength range down to the vacuum ultraviolet regime. In addition, CaF2 has …

[HTML][HTML] Machine learning of metal-ceramic wettability

SY Kim, J Li - Journal of Materiomics, 2022 - Elsevier
The adhesion and wetting between metal and ceramic is a basic problem in materials
science and engineering. For example, past materials selection for metal-ceramic …

[HTML][HTML] Initial stages of growth and electronic properties of epitaxial SrF2 thin films on Ag (1 1 1)

M Borghi, A Mescola, G Paolicelli, M Montecchi… - Applied Surface …, 2024 - Elsevier
Molecular beam epitaxy (MBE) is used to grow ultrathin SrF 2 layers at different
temperatures on Ag (1 1 1) epitaxial films prepared on mica. The electronic properties …

Epitaxial calcium and strontium fluoride films on highly mismatched oxide and metal substrates by MOCVD: Texture and morphology

AV Blednov, OY Gorbenko, SV Samoilenkov… - Chemistry of …, 2010 - ACS Publications
The growth of epitaxial CaF2 and SrF2 thin films on single crystalline r-cut sapphire, MgO
(001) and biaxially textured Ni− W polycrystalline tape by low-temperature MOCVD is …

STM study of the initial stages of on Cu(100)

JC Moreno-López, RA Vidal, MCG Passeggi Jr… - Physical Review B …, 2010 - APS
In this study we present results concerning the early growth stages of an insulator-metal
interface by means of scanning tunneling microscopy. We report the growth of aluminum …

An STM and Monte Carlo study of the AlF3 thin film growth on Cu (1 1 1)

AE Candia, L Gomez, RA Vidal, J Ferron… - Journal of Physics D …, 2015 - iopscience.iop.org
We report measurements of AlF 3 thin film growth on Cu (1 1 1) at room temperature by
means of scanning tunneling microscopy. The growth proceeds by the formation of fractal …

[HTML][HTML] Periodically spaced CaF 2 semi-insulating thin ribbons growth study on the Si (100) surface

E Duverger, D Riedel - Materials Advances, 2022 - pubs.rsc.org
The use and the study of semi-insulating layers on metal and semiconductor surfaces have
found continuous interest in the past decades. So far, the control of the sizes and growth …

Double sample holder for efficient high-resolution studies of an insulator and a metal surface

J Heggemann, L Laflör, P Rahe - Review of Scientific Instruments, 2021 - pubs.aip.org
A double sample holder supporting both a metal sample and an insulator crystal for high-
resolution scanning probe microscopy experiments is described. The metal sample serves …

A kinetically driven growth mechanism: AlF3 over Cu (0 0 1)

L Gómez, V Martín, J Garcés… - Journal of Physics D …, 2014 - iopscience.iop.org
A new diffusion model based on kinematic properties and supported by Metropolis Monte
Carlo free energy minimization and density functional theory calculations is proposed in this …