The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si
heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs …

The photocatalysis behavior of TiO 2 nanosheet array films was studied, in which the ratio of
bulk/surface defects were adjusted by annealing at different temperature. Combining …

The control of Bi incorporation and material properties in III-V-Bi alloys has proved
challenging due to their high sensitivity to the epitaxial growth parameters. Here, we present …

We have used positron annihilation spectroscopy and infrared absorption measurements to
study the Ga sublattice defects in epitaxial G a 1-x M nx A s with Mn content varying from 0 …

Diluted magnetic semiconductors (DMSs) have numerous potential applications, particularly
in spintronics. Therefore, the search for advanced DMSs has been a critical task for a long …

In order to determine the local structure of Mn in δ-doped GaAs layers we have carried out
an x-ray absorption spectroscopy experiment at the Mn-K edge in samples grown by …

In this work, we have investigated the structural and optical properties of GaAs (1− x) Bi
x/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311) B …

Positron annihilation lifetime spectroscopy (PALS) has the potential to determine open
volume defect identities and concentrations only if the spectrum can be accurately …

The structural characteristics of a new structure for photoconductive antennas have been
investigated. This structure is a multilayered epitaxial film grown on a GaAs (111) A …

Virgin MgO single crystals were implanted with 70keV C/N/O ions at room temperature to a
dose of 2× 1017/cm2. After implantation the samples showed room temperature hysteresis …