An ultrathin atomic-layer-deposited (ALD) AlO x gate insulator (GI) was implemented for self-
aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Although …

Electrical characteristics of self-aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-
film transistors (TFTs) with 4 nm-thick atomic-layer-deposited (ALD) AlO x gate insulator (GI) …

Synaptic plasticity divided into long-term and short-term categories is regarded as the origin
of memory and learning, which also inspires the construction of neuromorphic systems …

In this article, the mechanism of stability in amorphous indium-gallium-zinc oxide (-IGZO)
thin-film transistors (TFTs) with a natural length of 8 nm was investigated from the …

In this study, we incorporated TiN as a carrier suppressor into an amorphous InZnO channel
to achieve stable channels for thin-film transistors (TFTs) and light-emitting transistors …

In the field of oxide semiconductor thin-film transistors (TFTs), the occurrence of charge
trapping in the gate dielectric and interfaces presents significant challenges to their …

Here, by depositing both the zinc tin oxide (ZTO) channel and Al2O3 gate dielectric layer
using atomic layer deposition (ALD) without breaking vacuum, we made TFTs with a steep …

In this work, we propose a simple and efficient interfacial modification method for thin-film
transistor (TFT)-1 with poor stability under bias stress. For conventional top-contact TFT-2 …

To strengthen the downscaling potential of top-gate amorphous oxide semiconductor (AOS)
thin-film transistors (TFTs), the ultra-thin gate insulator (GI) was comparatively implemented …

Organic–inorganic (O–I) hybrid materials combine the great variability and interactions at the
molecular scale that have been demonstrated to have an impact on their properties …