Mg2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability

Proposal and evaluation of Mg2Si-based vertical tunnel field effect transistor for enhanced performance

A Chauhan, R Nautiyal, V Mishra, L Agarwal - Materials Science and …, 2024 - Elsevier
This work investigates the performance of silicon-on-insulator (SOI) based vertical
heterojunction tunnel FET with magnesium silicide (Mg 2 Si) as source material (Mg 2 Si …
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