[HTML][HTML] Effect of vacancy defect content on the interdiffusion of cubic and hexagonal SiC/Al interfaces: A molecular dynamics study
The mechanical properties of ceramic–metal nanocomposites are greatly affected by the
equivalent properties of the interface of materials. In this study, the effect of vacancy in SiC …
equivalent properties of the interface of materials. In this study, the effect of vacancy in SiC …
[HTML][HTML] Molecular dynamics study of interdiffusion for cubic and hexagonal SiC/Al interfaces
The mechanical properties of the SiC/Al interface are crucial in estimating the overall
strength of this ceramic-metal composite. The present work investigates the interdiffusion at …
strength of this ceramic-metal composite. The present work investigates the interdiffusion at …
[HTML][HTML] Investigating the Influence of Diffusion on the Cohesive Zone Model of the SiC/Al Composite Interface
Modeling metal matrix composites in finite element software requires incorporating a
cohesive zone model (CZM) to represent the interface between the constituent materials …
cohesive zone model (CZM) to represent the interface between the constituent materials …
Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC
F Wu, J Zhang, W Xi, YQ Chi, QB Liu, L Yang… - Applied Surface …, 2023 - Elsevier
In this study, Al implantation in 4H-SiC at the dose of 1× 10 14 cm− 2 was investigated. The
impacts of implantation temperature on the lattice quality, microstructure, surface …
impacts of implantation temperature on the lattice quality, microstructure, surface …
[PDF][PDF] Molecular dynamics study of interdiffusion for cubic and hexagonal SiC/Al interfaces. Crystals 2023, 13, 46
The mechanical properties of the SiC/Al interface are crucial in estimating the overall
strength of this ceramic-metal composite. The present work investigates the interdiffusion at …
strength of this ceramic-metal composite. The present work investigates the interdiffusion at …
[图书][B] Investigation of Al+-Implanted 4H-SiC Substrates After High Temperature Annealing
LJ Kuebler - 2023 - search.proquest.com
SiC as a wide bandgap semiconducting material has been established as a leading choice
for power electronic applications. Though device processing is starting to reach maturity …
for power electronic applications. Though device processing is starting to reach maturity …
The Role of Carbon Capping and Ar Pressure on Sic Surface Degradation During High Temperature Annealing
L Kuebler, E Hershkovitz, D Kouzminov… - Available at SSRN … - papers.ssrn.com
Abstract High temperature annealing (> 1600oC) is commonly employed to electrically
activate dopants and help recover the SiC lattice after ion implantation. This process results …
activate dopants and help recover the SiC lattice after ion implantation. This process results …
The Detailed Analysis of Diffusion Behavior of implanted ions in 4H-SiC
R Wada, T Nagayama, T Kuroi… - 2023 21st International …, 2023 - ieeexplore.ieee.org
We studied the diffusion behavior of implanted N, Al, P and Ge into 4H-SiC in detail. The
anomalous diffusion of Al and Ge was observed in the case of high dose implantation at …
anomalous diffusion of Al and Ge was observed in the case of high dose implantation at …